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BAV103

Description
0.2 A, SILICON, SIGNAL DIODE, DO-213AA
CategoryDiscrete semiconductor    diode   
File Size38KB,8 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BAV103 Overview

0.2 A, SILICON, SIGNAL DIODE, DO-213AA

BAV103 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Codeunknow
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee3
Number of components1
Maximum operating temperature175 °C
Maximum output current0.2 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.05 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)

BAV103 Related Products

BAV103 BAV100 BAV101 BAV102
Description 0.2 A, SILICON, SIGNAL DIODE, DO-213AA 0.2 A, SILICON, SIGNAL DIODE 0.2 A, 120 V, SILICON, SIGNAL DIODE RECTIFIER DIODE,150V V(RRM),DO-213AA
Is it Rohs certified? conform to incompatible incompatible conform to
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknow unknow unknow unknow
Configuration SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V
JESD-609 code e3 e0 e0 e3
Number of components 1 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A
Maximum repetitive peak reverse voltage 200 V 50 V 100 V 150 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount YES YES YES YES
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Matte Tin (Sn)
Is Samacsys - N N N
Base Number Matches - 1 1 1

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