SKiM301MLI12E4
Absolute Maximum Ratings
Symbol
IGBT
V
CES
I
C
I
Cnom
I
CRM
I
CRM
= 3xI
Cnom
V
CC
= 800 V
V
GE
≤
15 V
V
CES
≤
1200 V
T
j
= 175 °C
T
s
= 25 °C
T
s
= 70 °C
1200
312
252
300
900
-20 ... 20
T
j
= 150 °C
10
-40 ... 175
T
s
= 25 °C
T
s
= 70 °C
261
206
300
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
1485
-40 ... 175
T
s
= 25 °C
T
s
= 70 °C
253
199
300
I
FRM
= 3xI
Fnom
t
p
= 10 ms, sin 180°, T
j
= 25 °C
900
1620
-40 ... 175
T
terminal
= 80 °C
AC sinus 50 Hz, t = 1 min
400
-40 ... 125
4000
V
A
A
A
A
V
µs
°C
A
A
A
A
A
°C
A
A
A
A
A
°C
A
°C
V
Conditions
Values
Unit
SKiM 4
Trench IGBT Modules
SKiM301MLI12E4
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• V
CE(sat)
with positive temperature
coefficient
• Low inductance case
• Isolated by Al
2
O
3
DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x I
C
• Integrated temperature sensor
®
V
GES
t
psc
T
j
I
F
I
Fnom
I
FRM
I
FSM
T
j
Inverse diode
T
j
= 175 °C
Clamping diode
I
F
I
Fnom
I
FRM
I
FSM
T
j
Module
I
t(RMS)
T
stg
V
isol
T
j
= 175 °C
Typical Applications*
• UPS
• 3 Level Inverter
Characteristics
Symbol
Conditions
I
C
= 300 A
V
GE
= 15 V
chiplevel
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
CE
V
GE(th)
I
CES
C
ies
C
oes
C
res
Q
G
R
Gint
V
GE
= 15 V
V
GE
= 0 V
V
CE
= 1200 V
V
CE
= 25 V
V
GE
= 0 V
V
GE
= - 8 V...+ 15 V
T
j
= 25 °C
T
j
= 25 °C
T
j
= 150 °C
5
T
j
= 25 °C
T
j
= 150 °C
f = 1 MHz
f = 1 MHz
f = 1 MHz
18.45
1.22
1.04
1695
2.5
min.
typ.
1.80
2.20
0.8
0.7
3.3
5
5.8
0.1
max.
2.05
2.40
0.9
0.8
3.8
5.3
6.5
Unit
V
V
V
V
mΩ
mΩ
V
mA
mA
nF
nF
nF
nC
Ω
Remarks
• Case temperature limited to T
s
= 125°C
max; T
c
= T
s
(for baseplateless
modules)
• Recommended T
op
= -40 … +150°C
IGBT
V
CE(sat)
V
CE0
V
GE
=V
CE
, I
C
= 11.4 mA
MLI
© by SEMIKRON
Rev. 1 – 04.04.2014
1
SKiM301MLI12E4
Characteristics
Symbol
t
d(on)
t
r
E
on
t
d(off)
t
f
E
off
R
th(j-s)
Conditions
V
CE
= 600 V
I
C
= 300 A
R
G on
= 0.67
Ω
R
G off
= 0.67
Ω
di/dt
on
= 0 A/µs
di/dt
off
= 0 A/µs
per IGBT
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
min.
typ.
168
41
23.7
402
96
32.39
0.19
max.
Unit
ns
ns
mJ
ns
ns
mJ
K/W
SKiM
®
4
Trench IGBT Modules
SKiM301MLI12E4
Features
• IGBT 4 Trench Gate Technology
• Solder technology
• V
CE(sat)
with positive temperature
coefficient
• Low inductance case
• Isolated by Al
2
O
3
DCB (Direct Copper
Bonded) ceramic substrate
• Pressure contact technology for
thermal contacts
• Spring contact system to attach driver
PCB to the control terminals
• High short circuit capability, self limiting
to 6 x I
C
• Integrated temperature sensor
Characteristics
Symbol
Conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
I
F
= 300 A
di/dt
off
= 0 A/µs
V
GE
= -15 V
V
R
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
0.27
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
r
F
I
RRM
Q
rr
E
rr
R
th(j-s)
Module
L
CE
R
CC'+EE'
M
s
M
t
w
Temperature Sensor
R
100
B
100/125
T
c
=100°C (R
25
=5 kΩ)
R
(T)
=R
100
exp[B
100/125
(1/T-1/T
100
)]; T[K];
493 ± 5%
3550
±2%
Ω
K
terminal-chip
to heat sink M5
to terminals M6
T
s
= 25 °C
T
s
= 125 °C
2
4
317
22
1.35
1.75
3
5
nH
mΩ
mΩ
Nm
Nm
g
I
F
= 300 A
di/dt
off
= 0 A/µs
V
GE
= -15 V
V
R
= 600 V
per diode
T
j
= 25 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
T
j
= 150 °C
14.78
0.29
1.1
0.7
2.2
3.5
2.1
2.1
1.3
0.9
2.8
3.9
2.5
2.4
1.5
1.1
3.2
4.3
45.6
1.1
0.7
2.7
3.5
min.
typ.
2.2
2.2
1.3
0.9
3
4.2
max.
2.5
2.5
1.5
1.1
3.4
4.6
Unit
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
V
V
V
V
mΩ
mΩ
A
µC
mJ
K/W
Inverse diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 15 V
chiplevel
V
F0
Clamping diode
V
F
= V
EC
I
F
= 300 A
V
GE
= 15 V
chiplevel
V
F0
Typical Applications*
• UPS
• 3 Level Inverter
Remarks
• Case temperature limited to T
s
= 125°C
max; T
c
= T
s
(for baseplateless
modules)
• Recommended T
op
= -40 … +150°C
MLI
2
Rev. 1 – 04.04.2014
© by SEMIKRON
SKiM301MLI12E4
Fig. 1: Typ. output characteristic, inclusive R
CC'+ EE'
Fig. 2: Typical APD output characteristic
Fig. 5: Typ. turn-on /-off energy = f (I
C
)
Fig.7: Typical turn-on /-off energy = f (R
G
)
Fig. 9: Typ. gate charge characteristic
Fig. 11: Typ. switching times vs. R
G
© by SEMIKRON
Rev. 1 – 04.04.2014
3
SKiM301MLI12E4
Fig. 13: Typ. switching times vs. I
C
4
Rev. 1 – 04.04.2014
© by SEMIKRON
SKiM301MLI12E4
SKiM 4
MLI
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff.
© by SEMIKRON
Rev. 1 – 04.04.2014
5
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