ZBT SRAM, 256KX36, 3.5ns, CMOS, PQFP100, 20 X 14 MM, ROHS COMPLIANT, TQFP-100
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | SAMSUNG |
Parts packaging code | QFP |
package instruction | LQFP, QFP100,.63X.87 |
Contacts | 100 |
Reach Compliance Code | compli |
ECCN code | 3A991.B.2.A |
Maximum access time | 3.5 ns |
Other features | PIPELINED ARCHITECTURE |
Maximum clock frequency (fCLK) | 167 MHz |
I/O type | COMMON |
JESD-30 code | R-PQFP-G100 |
length | 20 mm |
memory density | 9437184 bi |
Memory IC Type | ZBT SRAM |
memory width | 36 |
Humidity sensitivity level | 2 |
Number of functions | 1 |
Number of terminals | 100 |
word count | 262144 words |
character code | 256000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 256KX36 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | LQFP |
Encapsulate equivalent code | QFP100,.63X.87 |
Package shape | RECTANGULAR |
Package form | FLATPACK, LOW PROFILE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 260 |
power supply | 2.5 V |
Certification status | Not Qualified |
Maximum seat height | 1.6 mm |
Maximum standby current | 0.06 A |
Minimum standby current | 2.38 V |
Maximum slew rate | 0.33 mA |
Maximum supply voltage (Vsup) | 2.625 V |
Minimum supply voltage (Vsup) | 2.375 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | GULL WING |
Terminal pitch | 0.65 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | 40 |
width | 14 mm |