K7K1618U2C-FI330 datasheet, PDF

K7K1618U2C-FI330: DescriptionStandard SRAM, 1MX18, 0.45ns, CMOS, PBGA165; Categorystorage storage; File Size594KB，19 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K7K1618U2C-FI330 Overview

Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	BGA, BGA165,11X15,40
Reach Compliance Code	unknow
ECCN code	3A991.B.2.A
Maximum access time	0.45 ns
Maximum clock frequency (fCLK)	333 MHz
I/O type	COMMON
JESD-30 code	R-PBGA-B165
JESD-609 code	e1
memory density	18874368 bi
Memory IC Type	STANDARD SRAM
memory width	18
Humidity sensitivity level	3
Number of terminals	165
word count	1048576 words
character code	1000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	1MX18
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA165,11X15,40
Package shape	RECTANGULAR
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	1.5,1.8 V
Certification status	Not Qualified
Maximum standby current	0.3 A
Minimum standby current	1.7 V
Maximum slew rate	0.7 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40

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