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MT57W1MH18CF-6

Description
DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165
Categorystorage    storage   
File Size485KB,24 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT57W1MH18CF-6 Overview

DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

MT57W1MH18CF-6 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instruction13 X 15 MM, 1 MM PITCH, FBGA-165
Contacts165
Reach Compliance Codenot_compliant
ECCN code3A991.B.2.A
Maximum access time0.5 ns
Other featuresPIPELINED ARCHITECTURE
Maximum clock frequency (fCLK)166 MHz
I/O typeSEPARATE
JESD-30 codeR-PBGA-B165
JESD-609 codee0
length15 mm
memory density18874368 bit
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize1MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA165,11X15,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
Parallel/SerialPARALLEL
power supply1.5/1.8,1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum standby current0.15 A
Minimum standby current1.7 V
Maximum slew rate0.28 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width13 mm
Base Number Matches1

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