Variable Capacitance Diode, High Frequency to Ultra High Frequency, 68pF C(T), 12V, Silicon, DO-7,
| Parameter Name | Attribute value |
| Maker | API Technologies |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | 3% MATCHED SET OF TWO DIODES |
| Minimum breakdown voltage | 12 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 10% |
| Minimum diode capacitance ratio | 7 |
| Nominal diode capacitance | 68 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JEDEC-95 code | DO-7 |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| minimum quality factor | 75 |
| Maximum reverse current | 0.01 µA |
| Reverse test voltage | 10 V |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
EEWorld
subscription
account
EEWorld
service
account
Automotive
development
circle
京公网安备 11010802033920号
EEWORLD
