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MVUPT17E3

Description
Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2
CategoryDiscrete semiconductor    diode   
File Size165KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
Download Datasheet Parametric View All

MVUPT17E3 Overview

Trans Voltage Suppressor Diode, 150W, 17V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

MVUPT17E3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
Parts packaging codeDO-216AA
package instructionROHS COMPLIANT, PLASTIC, POWERMITE-2
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage19 V
Shell connectionANODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-216AA
JESD-30 codeR-PDSO-G1
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation150 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage17 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
UPT5e3 – UPT48e3
UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
SCOTTSDALE DIVISION
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
DESCRIPTION
Microsemi’s new Powermite UPT series transient voltage suppressors
feature oxide-passivated chips, with high-temperature solder bonds for high
surge capability, and negligible electrical degradation under repeated surge
conditions. Both unidirectional and bidirectional configurations are available.
In addition to its size advantages, Powermite package includes a full
metallic bottom (cathode) that eliminates possibility of solder flux entrapment
at assembly and a unique locking tab serving as an integral heat sink.
Innovative design makes this device fully compatible for use with automatic
insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-216AA
FEATURES
Powermite Package with standoff voltages 5 to 48 V
Both Unidirectional polarities and Bidirectional:
Anode to case bottom (UPT5e3 thru UPT48e3)
Cathode to case bottom (UPT5Re3 thru UPT48Re3)
Bidirectional (UPTB8e3 thru UPTB48e3)
Clamping time less than 100 pico-seconds for
unidirectional
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, or JANTXV are available by
adding MQ, MX, or MV, prefixes respectively to part
numbers, e.g. MXUPT15e3, MVUPTB28e3,
MSPUPU10e3, etc.
RoHS Compliant with e3 suffix part number
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
New improved lower leakage current for the
UPT5Re3
Integral heat sink / locking tabs
Full metallic bottom eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: UPT5//UPT5R/UPTB8 to17
Class 2: UPT5//UPT5R/UPTB8 to12
(also add e3 suffix to each part number)
MAXIMUM RATINGS
Operating and Storage Temperature: –65ºC to
+150ºC
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)
UPT5Re3: 600 Watts
UPT5e3 thru UPT48e3: 1000 Watts
UPT8Re3 thru UPT48Re3: 1000 Watts
UPTB8e3 thru UPTB48e3: 1000 Watts
Peak Pulse Power at 10/1000 µs (See Figure 2).
UPT5Re3: 100 Watts
UPT5e3 thru UPT48e3: 150 Watts
UPT8Re3 thru UPT48Re3: 150 Watts
UPTB8e3 thru UPTB48e3: 150 Watts
Impulse Repetition Rate (duty factor): 0.01%
Thermal resistance: 15ºC/W junction to base tab or
240ºC/W junction to ambient when mounted on FR4
PC board with 1 oz copper
Steady-State Power: 2.5 Watts (base tab
≤112ºC)
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy compound meeting UL94V-0
FINISH: Annealed matte-Tin plating over copper
and readily solderable per MIL-STD-750, method
2026
POLARITY: Cathode or anode to TAB 1 (bottom)
as described in Marking below and Figure 5
MARKING:
Anode to TAB 1:
T plus the last two digits of part
number, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪
Cathode to TAB1:
U plus last two digits of part
number, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪
Bipolar:
B plus the last two digits of part number,
e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
WEIGHT: 0.016 gram (approximate)
See package dimension on last page
Tape & Reel option: Standard per EIA-481-B using
12 mm tape with 3,000 per 7 inch reel or 12,000
per 13 inch reel (add TR7 or TR13 suffix to part
number)
UPT5-48e3
UPT5R-48Re3 UPTB8-48e3
Copyright
©
2007
6-26-2007 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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