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APT80GP60B2G

Description
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, B2, TMAX-3
CategoryDiscrete semiconductor    The transistor   
File Size95KB,6 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
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APT80GP60B2G Overview

Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, B2, TMAX-3

APT80GP60B2G Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)100 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JESD-30 codeR-PSIP-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)284 ns
Nominal on time (ton)87 ns
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