BAS70 datasheet, PDF - EEWORLD Datasheet

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BAS70: Description0.2 A, 70 V, SILICON, SIGNAL DIODE; Categorysemiconductor Discrete semiconductor; File Size49KB，2 Pages; ManufacturerGE Sensing ( Amphenol Advanced Sensors ); Websitehttp://www.vishay.com/

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BAS70 Overview

0.2 A, 70 V, SILICON, SIGNAL DIODE

BAS70 Parametric

Parameter Name	Attribute value
Number of terminals	3
Number of components	1
Processing package description	Plastic, SOT-23, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	tin lead
Terminal location	pair
Packaging Materials	Plastic/Epoxy
Craftsmanship	SCHOTTKY
structure	single
Diode component materials	silicon
Maximum power consumption limit	0.2000 W
Diode type	Signal diode
Maximum reverse recovery time	0.0050 us
Maximum repetitive peak reverse voltage	70 V
Maximum average forward current	0.2000 A

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BAS70 THRU BAS70-06

Schottky Diodes

SOT-23

.122 (3.1)

.118 (3.0)

.016 (0.4)

FEATURES

♦

These diodes feature very low turn-on

Top View

.056 (1.43

)

.052 (1.33

)

voltage and fast switching.

♦

These devices are protected by a PN

max. .004 (0.1)

junction guard ring against excessive

voltage, such as electrostatic dis-

charges.

.007 (0.175)

.005 (0.125)

.037(0.95) .037(0.95)

.045 (1.15)

.037 (0.95)

.016 (0.4)

.102 (2.6)

.094 (2.4)

MECHANICAL DATA

Case:

SOT-23 Plastic Package

Weight:

approx. 0.008 g

Dimensions in inches and (millimeters)

Top View

BAS70

Marking: 73

BAS70-04

Marking: 74

Top View

BAS70-05

Marking: 75

BAS70-06

Marking: 76

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Repetitive Peak Reverse Voltage

Forward Continuous Current at T

amb

= 25 °C

Surge Forward Current at t

< 1 s, T

amb

= 25 °C

Power Dissipation

at T

amb

= 25 °C

Junction Temperature

Storage Temperature Range

Value

200

600

200

150

–55 to +150

Unit

°C

RRM

FSM

tot

Device on fiberglass substrate, see layout

4/98

BAS70 Related Products

	BAS70	BAS70-04	BAS70-05	BAS70-06
Description	0.2 A, 70 V, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE	0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals	3	3	3	3
Number of components	1	2	2	2
Processing package description	Plastic, SOT-23, 3 PIN	LEAD FREE, MINIATURE PACKAGE-3	PLASTIC PACKAGE-3	ROHS COMPLIANT PACKAGE-3
state	DISCONTINUED	ACTIVE	ACTIVE	ACTIVE
packaging shape	Rectangle	RECTANGULAR	Rectangle	Rectangle
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	pair	DUAL	pair	pair
Packaging Materials	Plastic/Epoxy	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy
Craftsmanship	SCHOTTKY	SCHOTTKY	SCHOTTKY	SCHOTTKY
structure	single	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
Diode component materials	silicon	SILICON	silicon	silicon
Diode type	Signal diode	SIGNAL DIODE	Signal diode	Signal diode
Maximum repetitive peak reverse voltage	70 V	70 V	70 V	70 V
Maximum average forward current	0.2000 A	0.0700 A	0.0700 A	0.0700 A
terminal coating	tin lead	-	MATTE Tin	MATTE Tin
Maximum power consumption limit	0.2000 W	-	0.2500 W	0.2500 W

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