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BAS70-04

Description
0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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BAS70-04 Overview

0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAS70-04 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionLEAD FREE, MINIATURE PACKAGE-3
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeSIGNAL DIODE
Maximum reverse recovery time0.0050 us
Maximum repetitive peak reverse voltage70 V
Maximum average forward current0.0700 A
BAS70 THRU BAS70-06
Schottky Diodes
SOT-23
.122 (3.1)
.118 (3.0)
.016 (0.4)
3
FEATURES
These diodes feature very low turn-on
Top View
.056 (1.43
)
.052 (1.33
)
voltage and fast switching.
These devices are protected by a PN
1
2
max. .004 (0.1)
junction guard ring against excessive
voltage, such as electrostatic dis-
charges.
.007 (0.175)
.005 (0.125)
.037(0.95) .037(0.95)
.045 (1.15)
.037 (0.95)
.016 (0.4)
.016 (0.4)
.102 (2.6)
.094 (2.4)
MECHANICAL DATA
Case:
SOT-23 Plastic Package
Weight:
approx. 0.008 g
3
Dimensions in inches and (millimeters)
3
Top View
1
2
1
2
BAS70
Marking: 73
3
BAS70-04
Marking: 74
3
Top View
1
2
1
2
BAS70-05
Marking: 75
BAS70-06
Marking: 76
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS FOR ONE DIODE
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25 °C
Surge Forward Current at t
p
< 1 s, T
amb
= 25 °C
Power Dissipation
1)
at T
amb
= 25 °C
Junction Temperature
Storage Temperature Range
1)
Value
70
200
1)
600
1)
200
1)
150
–55 to +150
Unit
V
mA
mA
mW
°C
°C
V
RRM
I
F
I
FSM
P
tot
T
j
T
S
Device on fiberglass substrate, see layout
4/98

BAS70-04 Related Products

BAS70-04 BAS70 BAS70-05 BAS70-06
Description 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 70 V, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.07 A, 70 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Number of terminals 3 3 3 3
Number of components 2 1 2 2
Processing package description LEAD FREE, MINIATURE PACKAGE-3 Plastic, SOT-23, 3 PIN PLASTIC PACKAGE-3 ROHS COMPLIANT PACKAGE-3
state ACTIVE DISCONTINUED ACTIVE ACTIVE
packaging shape RECTANGULAR Rectangle Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL pair pair pair
Packaging Materials PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure SERIES CONNECTED, CENTER TAP, 2 ELEMENTS single COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON silicon silicon silicon
Diode type SIGNAL DIODE Signal diode Signal diode Signal diode
Maximum repetitive peak reverse voltage 70 V 70 V 70 V 70 V
Maximum average forward current 0.0700 A 0.2000 A 0.0700 A 0.0700 A
terminal coating - tin lead MATTE Tin MATTE Tin
Maximum power consumption limit - 0.2000 W 0.2500 W 0.2500 W
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