|
TC53257F |
TC53257P |
TC53257 |
Description |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS |
Is it Rohs certified? |
incompatible |
incompatible |
- |
Maker |
Toshiba Semiconductor |
Toshiba Semiconductor |
- |
Reach Compliance Code |
unknown |
unknown |
- |
Maximum access time |
200 ns |
200 ns |
- |
JESD-30 code |
R-PDSO-G28 |
R-PDIP-T28 |
- |
JESD-609 code |
e0 |
e0 |
- |
memory density |
262144 bit |
262144 bit |
- |
Memory IC Type |
MASK ROM |
MASK ROM |
- |
memory width |
8 |
8 |
- |
Number of terminals |
28 |
28 |
- |
word count |
32768 words |
32768 words |
- |
character code |
32000 |
32000 |
- |
Maximum operating temperature |
85 °C |
85 °C |
- |
Minimum operating temperature |
-40 °C |
-40 °C |
- |
organize |
32KX8 |
32KX8 |
- |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
- |
encapsulated code |
SOP |
DIP |
- |
Encapsulate equivalent code |
SOP28,.5 |
DIP28,.6 |
- |
Package shape |
RECTANGULAR |
RECTANGULAR |
- |
Package form |
SMALL OUTLINE |
IN-LINE |
- |
power supply |
5 V |
5 V |
- |
Certification status |
Not Qualified |
Not Qualified |
- |
Maximum slew rate |
0.04 mA |
0.04 mA |
- |
Nominal supply voltage (Vsup) |
5 V |
5 V |
- |
surface mount |
YES |
NO |
- |
technology |
CMOS |
CMOS |
- |
Temperature level |
INDUSTRIAL |
INDUSTRIAL |
- |
Terminal surface |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
- |
Terminal form |
GULL WING |
THROUGH-HOLE |
- |
Terminal pitch |
1.27 mm |
2.54 mm |
- |
Terminal location |
DUAL |
DUAL |
- |
Base Number Matches |
1 |
1 |
- |