Trans Voltage Suppressor Diode, 3000W, 9V V(RWM), Bidirectional, 1 Element, Silicon
| Parameter Name | Attribute value |
| Maker | International Semiconductor Inc |
| package instruction | R-PDSO-G2 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | LOW INDUCTANCE |
| Maximum breakdown voltage | 11.1 V |
| Minimum breakdown voltage | 10 V |
| Breakdown voltage nominal value | 10.6 V |
| Maximum clamping voltage | 15.4 V |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| JESD-30 code | R-PDSO-G2 |
| Maximum non-repetitive peak reverse power dissipation | 3000 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| polarity | BIDIRECTIONAL |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 9 V |
| Maximum reverse current | 10 µA |
| surface mount | YES |
| technology | AVALANCHE |
| Terminal form | GULL WING |
| Terminal location | DUAL |
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