SQ1232A datasheet, PDF - EEWORLD Datasheet

SQ1232A: DescriptionVariable Capacitance Diode, Very High Frequency to Ultra High Frequency, 20pF C(T), 30V, Silicon, Abrupt; CategoryDiscrete semiconductor diode; File Size116KB，2 Pages; ManufacturerMsi Electronics Inc

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SQ1232A Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 20pF C(T), 30V, Silicon, Abrupt

Parameter Name	Attribute value
Maker	Msi Electronics Inc
package instruction	O-LALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	VERY HIGH Q
Minimum breakdown voltage	30 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode Capacitance Tolerance	10%
Minimum diode capacitance ratio	2.9
Nominal diode capacitance	20 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Maximum power dissipation	0.25 W
Certification status	Not Qualified
minimum quality factor	800
Maximum repetitive peak reverse voltage	30 V
Maximum reverse current	2e-8 µA
Reverse test voltage	25 V
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Varactor Diode Classification	ABRUPT

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