Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 3.3pF C(T), 60V, Silicon, Abrupt
Parameter Name | Attribute value |
Maker | Msi Electronics Inc |
package instruction | O-LALF-W2 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Other features | HIGH VOLTAGE, HIGH Q |
Minimum breakdown voltage | 60 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 2% |
Minimum diode capacitance ratio | 6 |
Nominal diode capacitance | 3.3 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
frequency band | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.25 W |
Certification status | Not Qualified |
minimum quality factor | 1100 |
Maximum repetitive peak reverse voltage | 60 V |
Maximum reverse current | 2e-8 µA |
Reverse test voltage | 55 V |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Varactor Diode Classification | ABRUPT |