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GC1757C

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 3.3pF C(T), 60V, Silicon, Abrupt
CategoryDiscrete semiconductor    diode   
File Size116KB,2 Pages
ManufacturerMsi Electronics Inc
Download Datasheet Parametric View All

GC1757C Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 3.3pF C(T), 60V, Silicon, Abrupt

GC1757C Parametric

Parameter NameAttribute value
MakerMsi Electronics Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH VOLTAGE, HIGH Q
Minimum breakdown voltage60 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance2%
Minimum diode capacitance ratio6
Nominal diode capacitance3.3 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
minimum quality factor1100
Maximum repetitive peak reverse voltage60 V
Maximum reverse current2e-8 µA
Reverse test voltage55 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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