FUR560 datasheet, PDF - EEWORLD Datasheet

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> FUR560

Preview

FUR560: DescriptionRectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size45KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

Download Datasheet Parametric Compare View All

FUR560 Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

FUR560 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Fagor Electrónica
Parts packaging code	DO-201AD
package instruction	PLASTIC PACKAGE-2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
application	ULTRA FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
JESD-609 code	e3
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	600 V
Maximum reverse recovery time	0.095 µs
surface mount	NO
technology	AVALANCHE
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

FUR560 Preview

FUR520....FUR560

5 Amp. Glass Passivated Avalanche Ultrafast Recovery Rectifier

Dimensions in mm.

DO-201 AD

(Plastic)

Voltage

200 to 600 V

Current

5 A at 20 ºC

®

9.1

± 0.3

62.5

± 0.5

Mounting instructions

1. Min. distance from body to soldering point,

4 mm.

2. Max. solder temperature, 350 °C.

3. Max. soldering time, 3.5 sec.

4. Do not bend lead at a point closer than

3 mm. to the body.

•

Glass Passivated Junction

•

High current capability

•

The plastic material carries

U/L recognition 94 V-0

•

Terminals: Axial Leads

•

Polarity: Color band denotes cathode

FUR520

200

140

200

FUR540

400

280

400

5A

50 A

150 A

50 ns

100 pF

– 65 to + 175 °C

20 mJ

95 ns

FUR560

600

420

600

Maximum Ratings, according to IEC publication No. 134

V

RRM

V

RMS

V

DC

I

F(AV)

I

FRM

I

FSM

t

rr

C

j

T

j

T

stg

E

RSM

Peak Recurrent reverse voltage (V)

Maximum RMS voltage

(V)

Maximum DC blocking voltage (V)

Forward current at Tamb = 20 °C

Recurrent peak forward current

8.3 ms. peak forward surge current

(Jedec Method)

Max. reverse recovery time from

I

F

= 1.0 A ; dI

F

/dt = -50 A/µsg ; V

R

= 30 V

Typical Junction Capacitance at 1 MHz

and reverse voltaje of 4V

DC

Operating temperature range

Storage temperature range

Maximum non repetitive peak

reverse avalanche energy.

I

R

= 1.0 A ; T

J

= 25 ºC

Max. forward voltage drop at I

F

= 5 A

Max. reverse current at V

RRM

at 25 ºC

at 150 ºC

Max. thermal resistance ( l = 10 mm.)

Electrical Characteristics at Tamb = 25 °C

V

F

I

R

thj-a

1.1 V

5 µA

150 µA

1.30 V

10 µA

250 µA

20 °C/W

Nov - 05

FUR5

Rating And Characteristic Curves

FORWARD CURRENT DERATING CURVE

5

10 mm. - 10 mm.

TYPICAL FORWARD CHARACTERISTIC

10

2

4

FUR520

10

3

1

2

10

-1

1

FUR540

FUR560

T j = 25 ºC

0

25

50

75

100

125

150

175

Tamb, ambient temperature (

o

C)

10

-2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

V

F

, instantaneous forward voltage (V)

250

MAXIMUM NON REPETITIVE

PEAK FORWARD SURGE CURRENT

TYPICAL JUNCTION CAPACITANCE

350

300

T j = 25ºC

f = 1 MHz

200

250

150

200

150

100

50

0

1

2

4

6

10

20

40 60 100

Number of cycles at 60 Hz.

0

0.1

0.5

1

2

5

100

10

50 100

V

R

, reverse voltage (V)

Nov - 05

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

FUR560 Related Products

	FUR560	FUR540	FUR520
Description	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 600V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2	Rectifier Diode, Avalanche, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
Maker	Fagor Electrónica	Fagor Electrónica	Fagor Electrónica
Parts packaging code	DO-201AD	DO-201AD	DO-201AD
package instruction	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2	PLASTIC PACKAGE-2
Contacts	2	2	2
Reach Compliance Code	compli	compliant	compliant
ECCN code	EAR99	EAR99	EAR99
application	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY	ULTRA FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2
JESD-609 code	e3	e3	e3
Maximum non-repetitive peak forward current	50 A	50 A	50 A
Number of components	1	1	1
Phase	1	1	1
Number of terminals	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C
Maximum output current	5 A	5 A	5 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	600 V	400 V	200 V
Maximum reverse recovery time	0.095 µs	0.095 µs	0.05 µs
surface mount	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

Recommended Resources

Level indication circuit

Principle of high current switching regulated power supply circuit

Dual op amp three-stage tone processing circuit diagram

MOS image sensor oscilloscope imaging circuit

Isolation circuit with gain compensation

High-power switching—an important task of transistors

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

Popular Components