MR25H10CDCR datasheet, PDF - EEWORLD Datasheet

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MR25H10CDCR: DescriptionMemory Circuit, 128KX8, CMOS, PDSO8, DFN-8; Categorystorage storage; File Size2MB，20 Pages; ManufacturerEverspin Technologies; Environmental Compliance

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MR25H10CDCR Overview

Memory Circuit, 128KX8, CMOS, PDSO8, DFN-8

MR25H10CDCR Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Everspin Technologies
Parts packaging code	SON
package instruction	HVSON, SOLCC8,.25
Contacts	8
Reach Compliance Code	compli
ECCN code	EAR99
JESD-30 code	R-PDSO-N8
length	6 mm
memory density	1048576 bi
Memory IC Type	MEMORY CIRCUIT
memory width	8
Mixed memory types	N/A
Number of functions	1
Number of terminals	8
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Package body material	PLASTIC/EPOXY
encapsulated code	HVSON
Encapsulate equivalent code	SOLCC8,.25
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3/3.3 V
Certification status	Not Qualified
Maximum seat height	1 mm
Maximum standby current	0.000115 A
Maximum slew rate	0.027 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	5 mm

MR25H10CDCR Related Products

	MR25H10CDCR	MR25H10CDF	MR25H10CDFR
Description	Memory Circuit, 128KX8, CMOS, PDSO8, DFN-8	Memory Circuit, 128KX8, CMOS, PDSO8, DFN-8	Memory Circuit, 128KX8, CMOS, PDSO8, DFN-8
Is it Rohs certified?	conform to	conform to	conform to
Maker	Everspin Technologies	Everspin Technologies	Everspin Technologies
Parts packaging code	SON	SON	SON
package instruction	HVSON, SOLCC8,.25	DFN-8	DFN-8
Contacts	8	8	8
Reach Compliance Code	compli	compliant	compli
ECCN code	EAR99	EAR99	EAR99
JESD-30 code	R-PDSO-N8	R-PDSO-N8	R-PDSO-N8
length	6 mm	6 mm	6 mm
memory density	1048576 bi	1048576 bit	1048576 bi
Memory IC Type	MEMORY CIRCUIT	MEMORY CIRCUIT	MEMORY CIRCUIT
memory width	8	8	8
Mixed memory types	N/A	N/A	N/A
Number of functions	1	1	1
Number of terminals	8	8	8
word count	131072 words	131072 words	131072 words
character code	128000	128000	128000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C
organize	128KX8	128KX8	128KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	HVSON	HVSON	HVSON
Encapsulate equivalent code	SOLCC8,.25	SOLCC8,.25	SOLCC8,.25
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3/3.3 V	3/3.3 V	3/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	0.9 mm	0.9 mm
Maximum standby current	0.000115 A	0.000115 A	0.000115 A
Maximum slew rate	0.027 mA	0.027 mA	0.027 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.7 V	2.7 V	2.7 V
Nominal supply voltage (Vsup)	3 V	3 V	3 V
surface mount	YES	YES	YES
technology	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	5 mm	5 mm	5 mm

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