SML30A33R1 datasheet, PDF - EEWORLD Datasheet

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SML30A33R1: DescriptionPower Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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SML30A33R1 Overview

Power Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

SML30A33R1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	1300 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V
Maximum drain current (ID)	33 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	132 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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SML30A33

TO–3 Package Outline.

Dimensions in mm (inches)

25.15 (0.99)

26.67 (1.05)

10.67 (0.42)

11.18 (0.44)

1.52 (0.06)

3.43 (0.135)

6.35 (0.25)

9.15 (0.36)

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

1.47 (0.058)

1.60 (0.063)

1

2

3

(case)

3.84 (0.151)

4.09 (0.161)

7.92 (0.312)

12.70 (0.50)

V

DSS

300V

33A

I

D(cont)

Ω

R

DS(on)

0.090Ω

• Faster Switching

• Lower Leakage

• TO–3 Hermetic Package

38.61 (1.52)

39.12 (1.54)

29.9 (1.177)

30.4 (1.197)

Pin 1 – Gate

16.64 (0.655)

17.15 (0.675)

Pin 2 – Source

Case – Drain

D

22.23

(0.875)

max.

G

S

StarMOS is a new generation of high voltage

N–Channel enhancement mode power MOSFETs.

This new technology minimises the JFET effect,

increases packing density and reduces the

on-resistance. StarMOS also achieves faster

switching speeds through optimised gate layout.

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

J

, T

STG

T

L

I

AR

E

AR

E

AS

Drain – Source Voltage

Continuous Drain Current

Pulsed Drain Current

1

Gate – Source Voltage

Gate – Source Voltage Transient

Total Power Dissipation @ T

case

= 25°C

Derate Linearly

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

Avalanche Current

1

(Repetitive and Non-Repetitive)

Repetitive Avalanche Energy

1

Single Pulse Avalanche Energy

2

300

33

132

±30

±40

235

1.88

–55 to 150

300

33

30

1300

V

A

V

W

W/°C

°C

A

mJ

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Starting T

J

= 25°C, L = 2.39mH, R

G

= 25Ω, Peak I

L

= 33A

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

6/99

SML30A33R1 Related Products

	SML30A33R1	SML30A33
Description	Power Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,	Power Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Is it Rohs certified?	conform to	incompatible
Maker	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	1300 mJ	1300 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V	300 V
Maximum drain current (ID)	33 A	33 A
Maximum drain-source on-resistance	0.09 Ω	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	132 A	132 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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