SML30A33 datasheet, PDF - EEWORLD Datasheet

SML30A33: DescriptionPower Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,; CategoryDiscrete semiconductor The transistor; File Size21KB，2 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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SML30A33 Overview

Power Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	1300 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V
Maximum drain current (ID)	33 A
Maximum drain-source on-resistance	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	132 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	SML30A33	SML30A33R1
Description	Power Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,	Power Field-Effect Transistor, 33A I(D), 300V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3,
Is it Rohs certified?	incompatible	conform to
Maker	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	1300 mJ	1300 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	300 V	300 V
Maximum drain current (ID)	33 A	33 A
Maximum drain-source on-resistance	0.09 Ω	0.09 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3	TO-3
JESD-30 code	O-MBFM-P2	O-MBFM-P2
Number of components	1	1
Number of terminals	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	132 A	132 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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