S71NS128NA0BJWMY0 datasheet, PDF

S71NS128NA0BJWMY0: DescriptionMemory Circuit, 8MX16, CMOS, PBGA44, 7.70 X 6.20 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44; Categorystorage storage; File Size3MB，113 Pages; ManufacturerSPANSION; Websitehttp://www.spansion.com/; Environmental Compliance

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S71NS128NA0BJWMY0 Overview

Memory Circuit, 8MX16, CMOS, PBGA44, 7.70 X 6.20 MM, 1.20 MM HEIGHT, LEAD FREE, FBGA-44

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SPANSION
Parts packaging code	BGA
package instruction	TFBGA,
Contacts	44
Reach Compliance Code	compli
Other features	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE
JESD-30 code	R-PBGA-B44
JESD-609 code	e1
length	7.7 mm
memory density	134217728 bi
Memory IC Type	MEMORY CIRCUIT
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of terminals	44
word count	8388608 words
character code	8000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-25 °C
organize	8MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	1.95 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	TIN SILVER COPPER
Terminal form	BALL
Terminal pitch	0.5 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	40
width	6.285 mm

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