IRF730 datasheet, PDF - EEWORLD Datasheet

IRF730: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size311KB，3 Pages; ManufacturerMicro Electronics; Websitehttp://www.microelectr.com.hk

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Micro Electronics
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	5.5 A
Maximum drain current (ID)	5.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Number of components	1
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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