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2SD1531

Description
Bipolar Transistors;NPN;2A;40V;TO-126
CategoryDiscrete semiconductor   
File Size211KB,2 Pages
ManufacturerInchange Semiconductor
Download Datasheet View All

2SD1531 Overview

Bipolar Transistors;NPN;2A;40V;TO-126

isc
Silicon NPN Power Transistor
2SD1531
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 40V(Min)
·Good
Linearity of h
FE
·Low
Collector Saturation Voltage
·Minimum
Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed
for AF output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
50
V
V
CEO
Collector-Emitter Voltage
40
V
V
EBO
Emitter-Base Voltage
5
V
I
C
Collector Current-Continuous
2
A
I
CP
Collector Current-Peak
Collector Power Dissipation
@ T
C
=25℃
4
A
5
W
1.2
P
C
Collector Power Dissipation
@ T
a
=25℃
Junction Temperature
T
J
150
T
stg
Storage Temperature Range
-55~150
isc website
www.iscsemi.com
1
isc & iscsemi
is registered trademark
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