HMC478MP86
/
478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Typical Applications
Features
P1dB Output Power: +18 dBm
Gain: 22 dB
Output IP3: +32 dBm
Cascadable 50 Ohm I/Os
Single Supply: +5V to +8V
Robust 1,000V ESD, Class 1C
Included in the HMC-DK001 Designer’s Kit
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
The HMC478MP86 / HMC478MP86E is an ideal RF/
IF gain block & LO or PA driver:
• Cellular / PCS / 3G
• Fixed Wireless & WLAN
• CATV, Cable Modem & DBS
• Microwave Radio & Test Equipment
Functional Diagram
General Description
The HMC478MP86 & HMC478MP86E are SiGe
Heterojunction Bipolar Transistor (HBT) Gain Block
MMIC SMT amplifiers covering DC to 4 GHz. This
Micro-P packaged amplifier can be used as a cas-
cadable 50 Ohm RF/IF gain stage as well as a
LO or PA driver with up to +20 dBm output power.
The HMC478MP86(E) offers 22 dB of gain with a
+32 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
feedback pair used results in reduced sensitivity to
normal process variations and excellent gain stability
over temperature while requiring a minimal number of
external bias components.
Electrical Specifi cations,
Vs= 5V, Rbias= 18 Ohm, T
A
= +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 4 GHz
DC - 1.0 GHz
1.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 1.0 GHz
1.0 - 4.0 GHz
DC - 4 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
DC - 3.0 GHz
3.0 - 4.0 GHz
15
13
11
9
Min.
19
15
13
11
Typ.
22
18
16
14
0.015
15
12
13
20
17
20
18
16
14
12
32
29
25
2.5
3.5
62
0.02
Max.
Units
dB
dB
dB
dB
dB/ °C
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
mA
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
Noise Figure
Supply Current (Icq)
Note: Data taken with broadband bias tee on device output.
8-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478MP86
/
478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Broadband Gain & Return Loss
30
20
RESPONSE (dB)
10
0
-10
-20
-30
0
1
2
3
4
5
6
7
8
FREQUENCY (GHz)
S21
S11
S22
Gain vs. Temperature
30
25
20
15
10
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8-2
Input Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
Output Return Loss vs. Temperature
0
-5
RETURN LOSS (dB)
-10
-15
-20
-25
-30
0
1
2
3
4
5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
+25 C
+85 C
-40 C
Reverse Isolation vs. Temperature
0
REVERSE ISOLATION (dB)
-5
Noise Figure vs. Temperature
10
9
8
NOISE FIGURE (dB)
+25 C
+85 C
-40 C
GAIN (dB)
+25 C
+85 C
-40 C
-10
-15
-20
-25
-30
0
1
2
7
6
5
4
3
2
1
0
3
4
5
0
1
2
3
4
5
FREQUENCY (GHz)
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478MP86
/
478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
P1dB vs. Temperature
Psat vs. Temperature
24
22
20
18
Psat (dBm)
+25 C
+85 C
-40 C
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
P1dB (dBm)
24
22
20
18
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
FREQUENCY (GHz)
16
14
12
10
8
6
4
2
0
0
1
2
3
4
5
FREQUENCY (GHz)
+25C
+85C
-40C
Output IP3 vs. Temperature
35
Gain, Power & OIP3 vs. Supply Voltage
for Constant Icc= 62 mA @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
32
28
24
20
16
12
8
4
0
5
6
Vs (Vdc)
7
8
Gain
P1dB
Psat
OIP3
30
OIP3 (dBm)
25
20
+25 C
+85 C
-40 C
15
10
0
1
2
3
4
5
FREQUENCY (GHz)
Vcc vs. Icc Over Temperature for
Fixed Vs= 5V, R
BIAS
= 18 Ohms
80
75
70
Icc (mA)
65
60
55
-40 C
50
45
40
3.7
+25 C
+85 C
Gain, Power & OIP3 vs. Supply Voltage
for Rs = 18 Ohms @ 850 MHz
Gain (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
36
32
28
24
20
16
12
8
4
0
4.5
Gain
P1dB
Psat
OIP3
3.8
3.9
4
Vcc (Vdc)
4.1
4.2
4.3
5
Vs (Vdc)
5.5
8-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478MP86
/
478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Collector Bias Current (Icc)
RF Input Power (RFIN)(Vcc = +4.3 Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
Thermal Resistance
(junction to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6.0 Vdc
100 mA
+5 dBm
150 °C
0.583 W
111.5 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
8-4
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
5. THE MICRO-P PACKAGE IS DIMENSIONALLY
COMPATIBLE WITH THE “MICRO-X PACKAGE”
Package Information
Part Number
HMC478MP86
HMC478MP86E
Package Body Material
Low Stress Injection Molded Plastic
RoHS-compliant Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
100% matte Sn
MSL Rating
MSL1
MSL1
[1]
Package Marking
478
478
[2]
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC478MP86
/
478MP86E
v03.0810
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Pin Descriptions
8
AMPLIFIERS - DRIVER & GAIN BLOCK - SMT
Pin Number
Function
Description
Interface Schematic
1
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
3
RFOUT
RF output and DC Bias (Vcc) for the output stage.
2, 4
GND
These pins must be connected to RF/DC ground.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
R
BIAS
V
ALUE
R
BIAS
P
OWER
R
ATING
5V
18 Ω
1/8 W
6V
35 Ω
1/4 W
8V
67 Ω
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2. R
BIAS
provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Frequency (MHz)
Component
50
L1
C1, C2
270 nH
0.01 μF
900
56 nH
100 pF
1900
18 nH
100 pF
2200
18 nH
100 pF
2400
15 nH
100 pF
3500
8.2 nH
100 pF
8-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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