512K 64K x 8 Single 2.7-volt Battery-Voltage Flash Memory
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Atmel (Microchip) |
Parts packaging code | QFJ |
package instruction | QCCJ, LDCC32,.5X.6 |
Contacts | 32 |
Reach Compliance Code | compli |
ECCN code | EAR99 |
Maximum access time | 150 ns |
Other features | HARDWARE DATA PROTECTION |
startup block | BOTTOM |
command user interface | YES |
Data polling | YES |
JESD-30 code | R-PQCC-J32 |
JESD-609 code | e0 |
length | 13.97 mm |
memory density | 524288 bi |
Memory IC Type | FLASH |
memory width | 8 |
Humidity sensitivity level | 2 |
Number of functions | 1 |
Number of departments/size | 1,1 |
Number of terminals | 32 |
word count | 65536 words |
character code | 64000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 64KX8 |
Package body material | PLASTIC/EPOXY |
encapsulated code | QCCJ |
Encapsulate equivalent code | LDCC32,.5X.6 |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | 225 |
power supply | 3/3.3 V |
Programming voltage | 2.7 V |
Certification status | Not Qualified |
Maximum seat height | 3.56 mm |
Department size | 8K,56K |
Maximum standby current | 0.00005 A |
Maximum slew rate | 0.05 mA |
Maximum supply voltage (Vsup) | 3.6 V |
Minimum supply voltage (Vsup) | 2.7 V |
Nominal supply voltage (Vsup) | 3 V |
surface mount | YES |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | J BEND |
Terminal pitch | 1.27 mm |
Terminal location | QUAD |
Maximum time at peak reflow temperature | 30 |
switch bit | YES |
type | NOR TYPE |
width | 11.43 mm |