HER303G-H datasheet, PDF - EEWORLD Datasheet

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HER303G-H: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; File Size102KB，6 Pages; ManufacturerFORMOSA; Websitehttp://www.formosams.com/

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HER303G-H Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,

HER303G-H Parametric

Parameter Name	Attribute value
Maker	FORMOSA
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

HER303G-H Preview

Axial Leaded High Effciency Rectifiers

HER301G THRU HER308G

List

Formosa MS

List................................................................................................. 1

Package outline............................................................................... 2

Features.......................................................................................... 2

Mechanical data............................................................................... 2

Maximum ratings .............................................................................. 2

Rating and characteristic curves........................................................ 3

Pinning information........................................................................... 4

Marking........................................................................................... 4

Taping & bulk specifications for AXIAL devices.................................... 4

Suggested thermal profiles for soldering processes............................. 5

High reliability test capabilities........................................................... 6

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

2008/02/10

Revised Date

2010/03/10

Revision

C

Page.

6

Page 1

DS-222309

Axial Leaded High Effciency Rectifiers

HER301G THRU HER308G

3.0A Axial Leaded High

Effciency Rectifiers-50-1000V

Features

•

Axial lead type devices for through hole design.

•

High current capability.

•

Ultrafast recovery time for high efficiency.

•

High surge capability.

•

Glass passivated chip junction.

•

Lead-free parts meet RoHS requirments.

•

Suffix "-H" indicates Halogen free parts, ex. HER301G-H.

Formosa MS

DO-201AD

Package outline

1.0(25.4)

MIN.

.220(5.6)

.197(5.0)

DIA.

.375(9.5)

.285(7.2)

Mechanical data

•

Epoxy : UL94-V0 rated flame retardant

•

Case : Molded plastic, DO-201AD

•

Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed

.052(1.3)

.048(1.2)

DIA.

1.0(25.4)

MIN.

•

Polarity: Color band denotes cathode end

•

Mounting Position : Any

•

Weight : Approximated 1.10 gram

Dimensions in inches and (millimeters)

Maximum ratings and Electrical Characteristics

(AT

PARAMETER

Forward rectified current

Forward surge current

CONDITIONS

Ambient temperature = 50

O

C

T

A

=25

o

C unless otherwise noted)

Symbol

I

O

I

FSM

I

R

C

J

T

STG

-65

75

+175

MIN.

TYP.

MAX.

3.0

150

5.0

100

UNIT

A

8.3ms single half sine-wave (JEDEC methode)

V

R

= V

RRM

T

J

= 25

O

C

V

R

= V

RRM

T

J

= 125 C

f=1MHz and applied 4V DC reverse voltage

O

Reverse current

Diode junction capacitance

Storage temperature

*1

V

RRM

(V)

50

100

200

300

400

600

800

1000

V

RMS

*2

(V)

35

70

140

210

280

420

560

700

μA

pF

O

C

SYMBOLS

HER301G

HER302G

HER303G

HER304

G

HER305G

HER306G

HER307G

*3

V

R

(V)

50

100

200

300

400

600

800

1000

*4

V

F

(V)

*5

t

rr

(ns)

Operating

temperature

T

J

, (

O

C)

*1 Repetitive peak reverse voltage

*2 RMS voltage

1.00

50

1.30

-55 to +150

*3 Continuous reverse voltage

*4 Maximum forward voltage@I

F

=3.0A

*5 Maximum Reverse recovery time, note 1

1.85

75

HER308G

Note 1. Reverse recovery time test condition, I

F

=0.5A, I

R

=1.0A, I

RR

=0.25A

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

2008/02/10

Revised Date

2010/03/10

Revision

C

Page.

6

Page 2

DS-222309

Rating and characteristic curves (HER301G THRU HER308G)

Peak Forward Surge Current , I

FSM

(A)

Average Forward Current, I

F(AV)

(A)

3.0

2.5

2.0

1.5

1.0

0.5

Fig.1 - Forward Current Derating Curve

200

Fig. 2 - Maximum Non-Repetitive Peak

Forward Surge Current

8.3ms single half sine-wave

(JEDEC Method)

150

100

50

0

1

2

5

10

20

50

100

single phase half wave 60Hz

resistive or inductive load

25

50

75

100

125

150

0

Ambient Temperature, T

A

(°C)

Number of Cycles at 60 Hz

Instantaneous Forward Current, I

F

(A)

20

10

T

J

=

25

O

C

Instantaneous Reverse Current, (μA)

Fig. 3 - Typical Instantaneour Forward

Characteristics

Fig. 4 - Typical Reverse Characteristics

1000

HER306G~HER308G

100

T

J

=

125

O

C

1.0

HER304G~HER305G

10

T

J

=

75

O

C

.1

HER301G~HER303G

1.0

T

J

=

25

O

C

Pulse Width=300us

1% Duty Cycle

.01

0

.5

1.0

1.5

2.0

2.5

3.0

3.5

0.1

Instantaneous Forward Voltage, V

F

(Volts)

0

20

40

60

80

100

120

140

Percent of Rated Peak Reverse Voltage ( %)

Fig. 6 - Test Circuit Diagram and Reverse

Recovery Time Characteristic

Fig. 5 - Typical Junction Capacitance

Junction Capacitance, C

J

(pF)

175

150

50

W

NONINDUCTIVE

10

W

NONINDUCTIVE

+0.5A

trr

|

125

(+)

25Vdc

(approx.)

()

D.U.T.

()

PULSE

GENERATOR

(NOTE 2)

(+)

OSCILLISCOPE

(NOTE 1)

-1.0A

0

-0.25A

100

75

50

25

1

W

NON-

INDUCTIVE

1cm

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

0

.01

.05

.1

.5

1

5

10

50

100

SET TIME BASE FOR

50 / 10ns / cm

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

Reverse Voltage, V

R

(Volts)

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

2008/02/10

Revised Date

2010/03/10

Revision

C

Page.

6

Page 3

DS-222309

Axial Leaded High Effciency Rectifiers

HER301G THRU HER308G

Pinning information

Pin1

Pin2

cathode

anode

Simplified outline

Formosa MS

Symbol

1

2

1

2

Marking

Type number

HER301G

HER302G

HER303G

HER304G

HER305G

HER306G

HER307G

HER308G

Marking code

HER301G

HER302G

HER303G

HER304G

HER305G

HER306G

HER307G

HER308G

Taping & bulk specifications for AXIAL devices

52.4mm

17mm DIA.

55mm Max.

A

72mm DIA.

17mm DIA.

355mm

Max OFF

Alignment

1.2mm

71mm Max.

OFF Center

both sids

1.0mm

6.3mm

REEL PACKING

DEVICE

CASE

TYPE

DO-201AD

1,200

Q'TY 1

(PCS / REEL)

COMPONENT

SPACING

"A" in FIG. A

10 mm

CARTON

SIZE

(m/m)

380 * 340 * 370

4,800

Q'TY 2

(PCS / CARTON)

APPROX.

CROSS

WEIGHT(kg)

9.1

AMMO PACKING

DEVICE

CASE

TYPE

DO-201AD

1,200

Q'TY 1

(PCS / BOX)

INNER

BOX SIZE

(m/m)

260 * 83 * 160

CARTON

SIZE

(m/m)

440 * 270 * 340

12,000

Q'TY 2

(PCS / CARTON)

APPROX.

CROSS

WEIGHT(kg)

17.0

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

2008/02/10

Revised Date

2010/03/10

Revision

C

Page.

6

Page 4

DS-222309

Axial Leaded High Effciency Rectifiers

HER301G THRU HER308G

BULK PACKING

DEVICE

CASE

TYPE

DO-201AD

500

Q'TY 1

(PCS / BOX)

INNER

BOX SIZE

(m/m)

305 * 73 * 40

CARTON

SIZE

(m/m)

347 * 320 * 271

Formosa MS

Q'TY 2

(PCS / CARTON)

APPROX.

CROSS

WEIGHT(kg)

12,000

16.4

Suggested thermal profiles for soldering processes

1.Lead free temperature profile wave-soldering

280

260

240

220

200

Temperature(°C)

Peak soldering temperature not

to exceed 260ºC

180

160

140

120

100

80

60

40

20

0

20

Preheat

Max gradient 2ºC/s

Peak

Max well

time 5 Max

Cool Down

Max gradient-4ºC/s

Suggested gradient - 2ºC/s or

less

40

60

80

100 120 140 160 180 200 220 240

Time(Sec)

http://www.formosams.com/

TEL:886-2-22696661

FAX:886-2-22696141

Document ID

Issued Date

2008/02/10

Revised Date

2010/03/10

Revision

C

Page.

6

Page 5

DS-222309

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HER303G-H Related Products

	HER303G-H	HER306G-H	HER304G-H	HER301G-H	HER307G-H	HER302G-H	HER305G-H
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD,	Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD,	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD,	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD,	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
Maker	FORMOSA	FORMOSA	FORMOSA	FORMOSA	FORMOSA	FORMOSA	FORMOSA
package instruction	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknow	unknown	unknown	unknow	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1.85 V	1.3 V	1 V	1.85 V	1 V	1.3 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	200 V	600 V	300 V	50 V	800 V	100 V	400 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.05 µs	0.075 µs	0.05 µs	0.05 µs	0.075 µs	0.05 µs	0.05 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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