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Datasheet> All Categories > Discrete semiconductor> diode> HER301G-H
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HER301G-H

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD,
CategoryDiscrete semiconductor    diode   
File Size102KB，6 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Parametric Compare View All

HER301G-H Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD,

HER301G-H Parametric

Parameter NameAttribute value
MakerFORMOSA
package instructionO-PALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage50 V
Maximum reverse current5 µA
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

HER301G-H Preview

Axial Leaded High Effciency Rectifiers
HER301G THRU HER308G
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings .............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Taping & bulk specifications for AXIAL devices.................................... 4
Suggested thermal profiles for soldering processes............................. 5
High reliability test capabilities........................................................... 6
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
C
Page.
6
Page 1
DS-222309
Axial Leaded High Effciency Rectifiers
HER301G THRU HER308G
3.0A Axial Leaded High
Effciency Rectifiers-50-1000V
Features
•
Axial lead type devices for through hole design.
•
High current capability.
•
Ultrafast recovery time for high efficiency.
•
High surge capability.
•
Glass passivated chip junction.
•
Lead-free parts meet RoHS requirments.
•
Suffix "-H" indicates Halogen free parts, ex. HER301G-H.
Formosa MS
DO-201AD
Package outline
1.0(25.4)
MIN.
.220(5.6)
.197(5.0)
DIA.
.375(9.5)
.285(7.2)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, DO-201AD
•
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
•
Polarity: Color band denotes cathode end
•
Mounting Position : Any
•
Weight : Approximated 1.10 gram
Dimensions in inches and (millimeters)
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
CONDITIONS
Ambient temperature = 50
O
C
T
A
=25
o
C unless otherwise noted)
Symbol
I
O
I
FSM
I
R
C
J
T
STG
-65
75
+175
MIN.
TYP.
MAX.
3.0
150
5.0
100
UNIT
A
A
8.3ms single half sine-wave (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 125 C
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Diode junction capacitance
Storage temperature
*1
V
RRM
(V)
50
100
200
300
400
600
800
1000
V
RMS
*2
(V)
35
70
140
210
280
420
560
700
μA
pF
O
C
SYMBOLS
HER301G
HER302G
HER303G
HER304
G
HER305G
HER306G
HER307G
*3
V
R
(V)
50
100
200
300
400
600
800
1000
*4
V
F
(V)
*5
t
rr
(ns)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
1.00
50
1.30
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage@I
F
=3.0A
*5 Maximum Reverse recovery time, note 1
1.85
75
HER308G
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
C
Page.
6
Page 2
DS-222309
Rating and characteristic curves (HER301G THRU HER308G)
Peak Forward Surge Current , I
FSM
(A)
Average Forward Current, I
F(AV)
(A)
3.0
2.5
2.0
1.5
1.0
0.5
Fig.1 - Forward Current Derating Curve
200
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
8.3ms single half sine-wave
(JEDEC Method)
150
100
50
0
1
2
5
10
20
50
100
single phase half wave 60Hz
resistive or inductive load
25
50
75
100
125
150
0
Ambient Temperature, T
A
(°C)
Number of Cycles at 60 Hz
Instantaneous Forward Current, I
F
(A)
20
10
T
J
=
25
O
C
Instantaneous Reverse Current, (μA)
Fig. 3 - Typical Instantaneour Forward
Characteristics
Fig. 4 - Typical Reverse Characteristics
1000
HER306G~HER308G
100
T
J
=
125
O
C
1.0
HER304G~HER305G
10
T
J
=
75
O
C
.1
HER301G~HER303G
1.0
T
J
=
25
O
C
Pulse Width=300us
1% Duty Cycle
.01
0
.5
1.0
1.5
2.0
2.5
3.0
3.5
0.1
Instantaneous Forward Voltage, V
F
(Volts)
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage ( %)
Fig. 6 - Test Circuit Diagram and Reverse
Recovery Time Characteristic
Fig. 5 - Typical Junction Capacitance
Junction Capacitance, C
J
(pF)
175
150
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
+0.5A
trr
|
|
|
|
|
|
|
|
125
(+)
25Vdc
(approx.)
()
D.U.T.
()
PULSE
GENERATOR
(NOTE 2)
(+)
OSCILLISCOPE
(NOTE 1)
-1.0A
0
-0.25A
100
75
50
25
1
W
NON-
INDUCTIVE
1cm
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
0
.01
.05
.1
.5
1
5
10
50
100
SET TIME BASE FOR
50 / 10ns / cm
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
Reverse Voltage, V
R
(Volts)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
C
Page.
6
Page 3
DS-222309
Axial Leaded High Effciency Rectifiers
HER301G THRU HER308G
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Formosa MS
Symbol
1
2
1
2
Marking
Type number
HER301G
HER302G
HER303G
HER304G
HER305G
HER306G
HER307G
HER308G
Marking code
HER301G
HER302G
HER303G
HER304G
HER305G
HER306G
HER307G
HER308G
Taping & bulk specifications for AXIAL devices
52.4mm
17mm DIA.
55mm Max.
A
72mm DIA.
17mm DIA.
355mm
Max OFF
Alignment
1.2mm
71mm Max.
OFF Center
both sids
1.0mm
6.3mm
REEL PACKING
DEVICE
CASE
TYPE
DO-201AD
1,200
Q'TY 1
(PCS / REEL)
COMPONENT
SPACING
"A" in FIG. A
10 mm
CARTON
SIZE
(m/m)
380 * 340 * 370
4,800
Q'TY 2
(PCS / CARTON)
APPROX.
CROSS
WEIGHT(kg)
9.1
AMMO PACKING
DEVICE
CASE
TYPE
DO-201AD
1,200
Q'TY 1
(PCS / BOX)
INNER
BOX SIZE
(m/m)
260 * 83 * 160
CARTON
SIZE
(m/m)
440 * 270 * 340
12,000
Q'TY 2
(PCS / CARTON)
APPROX.
CROSS
WEIGHT(kg)
17.0
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
C
Page.
6
Page 4
DS-222309
Axial Leaded High Effciency Rectifiers
HER301G THRU HER308G
BULK PACKING
DEVICE
CASE
TYPE
DO-201AD
500
Q'TY 1
(PCS / BOX)
INNER
BOX SIZE
(m/m)
305 * 73 * 40
CARTON
SIZE
(m/m)
347 * 320 * 271
Formosa MS
Q'TY 2
(PCS / CARTON)
APPROX.
CROSS
WEIGHT(kg)
12,000
16.4
Suggested thermal profiles for soldering processes
1.Lead free temperature profile wave-soldering
280
260
240
220
200
Temperature(°C)
Peak soldering temperature not
to exceed 260ºC
180
160
140
120
100
80
60
40
20
0
0
20
Preheat
Max gradient 2ºC/s
Peak
Max well
time 5 Max
Cool Down
Max gradient-4ºC/s
Suggested gradient - 2ºC/s or
less
40
60
80
100 120 140 160 180 200 220 240
Time(Sec)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
C
Page.
6
Page 5
DS-222309
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

HER301G-H Related Products

HER301G-H HER306G-H HER304G-H HER303G-H HER307G-H HER302G-H HER305G-H
Description Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon, DO-201AD, Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, Rectifier Diode, 1 Phase, 1 Element, 3A, 300V V(RRM), Silicon, DO-201AD, Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon, DO-201AD,
Maker FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknow unknown unknown unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY EFFICIENCY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1.85 V 1.3 V 1 V 1.85 V 1 V 1.3 V
JEDEC-95 code DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD DO-201AD
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 150 A 150 A 150 A 150 A 150 A 150 A 150 A
Number of components 1 1 1 1 1 1 1
Phase 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3 A 3 A 3 A 3 A 3 A 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 50 V 600 V 300 V 200 V 800 V 100 V 400 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.05 µs 0.075 µs 0.05 µs 0.05 µs 0.075 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL AXIAL

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