F1601DMQB70 datasheet, PDF - EEWORLD Datasheet

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F1601DMQB70: DescriptionStandard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, DIP-22; Categorystorage storage; File Size213KB，8 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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F1601DMQB70 Overview

Standard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, DIP-22

F1601DMQB70 Parametric

Parameter Name	Attribute value
Maker	Fairchild
Parts packaging code	DIP
package instruction	DIP,
Contacts	22
Reach Compliance Code	unknow
ECCN code	3A001.A.2.C
Maximum access time	70 ns
JESD-30 code	R-CDIP-T22
length	28.015 mm
memory density	65536 bi
Memory IC Type	STANDARD SRAM
memory width	1
Number of functions	1
Number of terminals	22
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	64KX1
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	4.6 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	7.62 mm

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F1601DMQB70 Related Products

	F1601DMQB70	F1601LMQB70	F1601LMQB55	F1601DMQB55
Description	Standard SRAM, 64KX1, 70ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, DIP-22	Standard SRAM, 64KX1, 70ns, CMOS, CQCC22, LCC-22	Standard SRAM, 64KX1, 55ns, CMOS, CQCC22, LCC-22	Standard SRAM, 64KX1, 55ns, CMOS, CDIP22, 0.300 INCH, SIDE BRAZED, DIP-22
Maker	Fairchild	Fairchild	Fairchild	Fairchild
Parts packaging code	DIP	LCC	LCC	DIP
package instruction	DIP,	QCCN,	QCCN,	DIP,
Contacts	22	22	22	22
Reach Compliance Code	unknow	unknown	unknow	unknow
ECCN code	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C	3A001.A.2.C
Maximum access time	70 ns	70 ns	55 ns	55 ns
JESD-30 code	R-CDIP-T22	R-CQCC-N22	R-CQCC-N22	R-CDIP-T22
length	28.015 mm	12.45 mm	12.45 mm	28.015 mm
memory density	65536 bi	65536 bit	65536 bi	65536 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	1	1	1	1
Number of functions	1	1	1	1
Number of terminals	22	22	22	22
word count	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	64KX1	64KX1	64KX1	64KX1
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP	QCCN	QCCN	DIP
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	CHIP CARRIER	CHIP CARRIER	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	4.6 mm	2.03 mm	2.03 mm	4.6 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	NO
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal form	THROUGH-HOLE	NO LEAD	NO LEAD	THROUGH-HOLE
Terminal pitch	2.54 mm	1.27 mm	1.27 mm	2.54 mm
Terminal location	DUAL	QUAD	QUAD	DUAL
width	7.62 mm	7.366 mm	7.366 mm	7.62 mm

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