Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | Electronic Transistors Corp |
Parts packaging code | TO-22 |
package instruction | CYLINDRICAL, R-XBCY-W3 |
Contacts | 3 |
Reach Compliance Code | unknow |
Maximum collector current (IC) | 0.06 A |
Configuration | Single |
Minimum DC current gain (hFE) | 19 |
JESD-30 code | R-XBCY-W3 |
JESD-609 code | e0 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 0.75 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 1 MHz |
2N1154 | 2N1149 | 2N1150 | 2N1151 | 2N332 | 2N333 | 2N335 | 2N337 | 2N338 | |
---|---|---|---|---|---|---|---|---|---|
Description | Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN | Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN |
Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
Maker | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp | Electronic Transistors Corp |
Parts packaging code | TO-22 | TO-22 | TO-22 | TO-22 | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 |
package instruction | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, R-XBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 | CYLINDRICAL, O-MBCY-W3 |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
Maximum collector current (IC) | 0.06 A | 0.025 A | 0.025 A | 0.025 A | 0.025 A | 0.025 A | 0.025 A | 0.02 A | 0.02 A |
Configuration | Single | Single | Single | Single | Single | Single | Single | Single | Single |
JESD-30 code | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | R-XBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 150 °C | 150 °C |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | METAL | METAL | METAL | METAL | METAL |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 0.75 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.125 W | 0.125 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 1 MHz | 12 MHz | 13 MHz | 14 MHz | 4 MHz | 5 MHz | 6 MHz | 20 MHz | 30 MHz |
Minimum DC current gain (hFE) | 19 | 13 | 24 | 39 | - | 18 | 36 | 55 | 80 |
JEDEC-95 code | - | - | - | - | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 |