2N1149 datasheet, PDF - EEWORLD Datasheet

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2N1149: DescriptionSmall Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size92KB，1 Pages; ManufacturerElectronic Transistors Corp

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2N1149 Overview

Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN

2N1149 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Electronic Transistors Corp
Parts packaging code	TO-22
package instruction	CYLINDRICAL, R-XBCY-W3
Contacts	3
Reach Compliance Code	unknow
Maximum collector current (IC)	0.025 A
Configuration	Single
Minimum DC current gain (hFE)	13
JESD-30 code	R-XBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	12 MHz

2N1149 Related Products

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Description	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.06A I(C), 1-Element, NPN, Silicon, TO-22VAR, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN	Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp	Electronic Transistors Corp
Parts packaging code	TO-22	TO-22	TO-22	TO-22	TO-5	TO-5	TO-5	TO-5	TO-5
package instruction	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, R-XBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Contacts	3	3	3	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow	unknow
Maximum collector current (IC)	0.025 A	0.025 A	0.025 A	0.06 A	0.025 A	0.025 A	0.025 A	0.02 A	0.02 A
Configuration	Single	Single	Single	Single	Single	Single	Single	Single	Single
JESD-30 code	R-XBCY-W3	R-XBCY-W3	R-XBCY-W3	R-XBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3	3	3
Maximum operating temperature	175 °C	175 °C	175 °C	150 °C	175 °C	175 °C	175 °C	150 °C	150 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	METAL	METAL	METAL	METAL	METAL
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.15 W	0.15 W	0.15 W	0.75 W	0.15 W	0.15 W	0.15 W	0.125 W	0.125 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	12 MHz	13 MHz	14 MHz	1 MHz	4 MHz	5 MHz	6 MHz	20 MHz	30 MHz
Minimum DC current gain (hFE)	13	24	39	19	-	18	36	55	80
JEDEC-95 code	-	-	-	-	TO-5	TO-5	TO-5	TO-5	TO-5

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