2N5659 datasheet, PDF - EEWORLD Datasheet

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2N5659: DescriptionPower Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin, TO-111, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size129KB，1 Pages; ManufacturerInternational Devices Inc

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2N5659 Overview

Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin, TO-111, 4 PIN

2N5659 Parametric

Parameter Name	Attribute value
Maker	International Devices Inc
Parts packaging code	TO-111
package instruction	POST/STUD MOUNT, O-MUPM-X4
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	80 V
Configuration	Single
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-111
JESD-30 code	O-MUPM-X4
Number of components	1
Number of terminals	4
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	30 W
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

2N5659 Related Products

	2N5659	2N3713	2N5877
Description	Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 4 Pin, TO-111, 4 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN	Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
Maker	International Devices Inc	International Devices Inc	International Devices Inc
Parts packaging code	TO-111	TO-204AA	TO-204AA
package instruction	POST/STUD MOUNT, O-MUPM-X4	FLANGE MOUNT, O-MBFM-P2	FLANGE MOUNT, O-MBFM-P2
Contacts	4	2	2
Reach Compliance Code	unknow	unknow	unknow
ECCN code	EAR99	EAR99	EAR99
Maximum collector current (IC)	10 A	10 A	10 A
Collector-emitter maximum voltage	80 V	60 V	60 V
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	50	25	20
JEDEC-95 code	TO-111	TO-3	TO-3
JESD-30 code	O-MUPM-X4	O-MBFM-P2	O-MBFM-P2
Number of terminals	4	2	2
Maximum operating temperature	200 °C	175 °C	200 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	POST/STUD MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	30 W	150 W	150 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	UNSPECIFIED	PIN/PEG	PIN/PEG
Terminal location	UPPER	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	0.03 MHz	4 MHz
Number of components	1	1	-
Is it Rohs certified?	-	incompatible	incompatible
JESD-609 code	-	e0	e0
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED

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