2N5336 datasheet, PDF - EEWORLD Datasheet

2N5336: DescriptionPower Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size96KB，1 Pages; ManufacturerInternational Devices Inc

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Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin, TO-39, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Devices Inc
Parts packaging code	TO-39
package instruction	CYLINDRICAL, O-MBCY-W3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	80 V
Configuration	Single
Minimum DC current gain (hFE)	30
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	6 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

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