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2N5321

Description
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size94KB,1 Pages
ManufacturerInternational Devices Inc
Download Datasheet Parametric View All

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2N5321 Overview

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, NPN, Silicon, TO-5, TO-5, 3 PIN

2N5321 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Devices Inc
Parts packaging codeTO-5
package instructionCYLINDRICAL, O-MBCY-W3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage50 V
ConfigurationSingle
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-5
JESD-30 codeO-MBCY-W3
JESD-609 codee0
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)10 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
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