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JANTXV1N6122

Description
Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size94KB,2 Pages
ManufacturerSemicon Components Inc
Download Datasheet Parametric View All

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JANTXV1N6122 Overview

Trans Voltage Suppressor Diode, 500W, 35.8V V(RWM), Bidirectional, 1 Element, Silicon

JANTXV1N6122 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSemicon Components Inc
package instructionO-XALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage42.465 V
Breakdown voltage nominal value47 V
Shell connectionISOLATED
Maximum clamping voltage67.83 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
GuidelineMIL-19500/516
Maximum repetitive peak reverse voltage35.8 V
Maximum reverse current1 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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