WF1M32B-XXX3
1Mx32 3.3V NOR FLASH MODULE
FEATURES
Access Times of 100, 120, 150ns
Packaging
• 66 pin, PGA Type (H), 1.185" square, Hermetic Ceramic
HIP (Package 401)
• 68 lead, Low Profile CQFP (G2U), 3.5mm (0.140") square
(Package 510)
1,000,000 Erase/Program Cycles
Sector Architecture
• One 16KByte, two 8KBytes, one 32KByte, and fifteen
64kBytes (each chip)
• Any combination of sectors can be concurrently erased.
Also supports full chip erase
Organized as 1Mx32
Commercial, Industrial and Military Temperature Ranges
3.3 Volt for Read and Write Operations
Boot Code Sector Architecture (Bottom)
Low Power CMOS
Embedded Erase and Program Algorithms
Built-in Decoupling Caps for Low Noise Operation
Erase Suspend/Resume
• Supports reading data from or programing data to a
sector not being erased
Low Current Consumption
Typical values at 5MHz:
• 40mA Active Read Current
• 80mA Program/Erase Current
Weight
• WF1M32B-XG2UX3 -8 grams typical
• WF1M32B-XHX3 -13 grams typical
Note: For programming information refer to Flash Programming 8M3 Application Note.
This product is subject to change without notice.
PIN CONFIGURATION FOR WF1M32B-XHX3
TOP VIEW
I/O0-31
1
I/O8
I/O9
I/O10
A14
A16
A11
A0
A18
I/O0
I/O1
I/O2
11
22
12
RESET#
CS2#
GND
I/O11
A10
A9
A15
V
CC
CS1#
A19
I/O3
33
23
I/O15
I/O14
I/O13
I/O12
OE#
A17
WE#
I/O7
I/O6
I/O5
I/O4
I/O24
I/O25
I/O26
A7
A12
NC
A13
A8
I/O16
I/O17
I/O18
44
34
V
CC
CS4#
NC
I/O27
A4
A5
A6
NC
CS3#
GND
I/O19
55
45
I/O31
I/O30
I/O29
I/O28
A1
A2
A3
I/O23
I/O22
I/O21
I/O20
66
8
8
8
8
CS1#
RESET#
WE#
OE#
A0-19
CS2#
CS3#
CS4#
PIN DESCRIPTION
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Selects
Output Enable
Reset
Power Supply
Ground
Not Connected
A0-19
WE#
CS1-4#
OE#
RESET#
V
CC
GND
NC
56
BLOCK DIAGRAM
1M x 8
1M x 8
1M x 8
1M x 8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 14
© 2014 Microsemi Corporation. All rights reserved.
1
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WF1M32B-XXX3
PIN CONFIGURATION FOR WF1M32B-XG2UX3
TOP VIEW
I/O0-31
RESET#
A0
A1
A2
A3
A4
A5
CS3#
GND
CS4#
WE1#
A6
A7
A8
A9
A10
V
CC
PIN DESCRIPTION
Data Inputs/Outputs
Address Inputs
Write Enables
Chip Selects
Output Enable
Reset/Powerdown
Power Supply
Ground
A0-19
WE1-4#
CS1-4#
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
V
CC
A11
A12
A13
A14
A15
A16
CS1#
OE#
CS2#
A17
WE2#
WE3#
WE4#
A18
A19
NC
OE#
RESET#
V
CC
GND
BLOCK DIAGRAM
WE1# CS1#
RESET#
OE#
A0-19
WE2# CS2#
WE3# CS3#
WE4# CS4#
1M x 8
1M x 8
1M x 8
1M x 8
8
8
8
8
I/O0-7
I/O8-15
I/O16-23
I/O24-31
The Microsemi 68 lead G2U CQFP
fi
lls the same
fi
t and function as
the JEDEC 68 lead CQFJ or 68 PLCC. But the G2U has the TCE
and lead inspection advantage of the CQFP form.
23.876 (0.940)
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 14
© 2014 Microsemi Corporation. All rights reserved.
2
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WF1M32B-XXX3
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature (M, Q)
Supply Voltage Range (V
CC
)
Signal Voltage Range
Storage Temperature Range
Lead Temperature (soldering, 10 seconds)
Endurance (write/erase cycles)
-55 to +125
-0.5 to +4.0
-0.5 to Vcc +0.5
-65 to +150
+300
1,000,000 min.
Unit
°C
V
V
°C
°C
cycles
Parameter
OE# capacitance
WE1-4# capacitance
CS1-4# capacitance
Data I/O capacitance
Address input capacitance
CAPACITANCE
T
A
= +25°C
Symbol
C
OE
C
WE
C
CS
C
I/O
C
AD
Conditions
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
V
I/O
= 0 V, f = 1.0 MHz
V
IN
= 0 V, f = 1.0 MHz
Max
50
20
20
20
50
Unit
pF
pF
pF
pF
pF
NOTES:
1. Stresses above the absolute maximum rating may cause permanent damage to the device.
Extended operation at the maximum levels may degrade performance and affect reliability.
This parameter is guaranteed by design but not tested.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Operating Temp. (Mil.)
Operating Temp. (Ind.)
Operating Temp. (Com.)
Symbol
V
CC
V
IH
V
IL
T
A
T
A
T
A
Min
3.0
0.7 x V
CC
-0.5
-55
-40
0
Max
3.6
V
CC
+ 0.3
+0.8
+125
+85
+70
Unit
V
V
V
°C
°C
°C
Parameter
DATA RETENTION
Minimum Pattern Data Retention
Time
Test Conditions
150°C
125°C
Min
10
20
Unit
Years
Years
DC CHARACTERISTICS – CMOS COMPATIBLE
Parameter
Input Leakage Current
Output Leakage Current
V
CC
Active Current for Read (1)
V
CC
Active Current for Program or Erase (2)
V
CC
Standby Current
Output Low Voltage
Output High Voltage
Low V
CC
Lock-Out Voltage (3)
NOTES:
1. The current listed as typically less than 8 mA/MHz, with OE# at V
IH
.
2. I
CC
active while Embedded Algorithm (program or erase) is in progress.
3. Guaranteed by design, but not tested.
Symbol
I
LI
I
LOx32
I
CC1
I
CC2
I
CC3
V
OL
V
OH1
V
LKO
Conditions
V
CC
= V
CC MAX
, V
IN
= GND or V
CC
V
CC
= V
CC MAX
, V
OUT
= GND or V
CC
CS# = V
IL
, OE# = V
IH
, f = 5MHz
CS# = V
IL
, OE# = V
IH
CS#, RESET# = V
CC
± 0.3V
I
OL
=4.0 mA, V
CC
= V
CC MIN
I
OH
= -2.0 mA, V
CC
= V
CC MIN
Min
Max
10
10
120
140
200
0.45
2.5
2.4
2.3
Unit
μA
μA
mA
mA
μA
V
V
V
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 14
© 2014 Microsemi Corporation. All rights reserved.
3
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WF1M32B-XXX3
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – CS# CONTROLLED
Parameter
Write Cycle Time
Write Enable Setup Time
Chip Select Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Chip Select Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase Time
Read Recovery Time (2)
Chip Programming Time
NOTES:
1. Typical value for t
WHWH1
is 9μs.
2. Guaranteed by design, but not tested.
Symbol
t
AVAV
t
WLEL
t
ELEH
t
AVEL
t
DVEH
t
EHDX
t
ELAX
t
EHEL
t
WHWH1
t
WHWH2
t
GHEL
t
WC
t
WS
t
CP
t
AS
t
DS
t
DH
t
AH
t
CPH
Min
100
0
50
0
50
0
50
20
-100
Max
Min
120
0
50
0
50
0
50
20
-120
Max
Min
150
0
50
0
50
0
50
20
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
sec
300
21
0
50
0
300
21
0
50
300
21
50
AC TEST CIRCUIT
Parameter
Input Pulse Levels
I
OL
Current Source
AC TEST CONDITIONS
Typ
V
IL
= 0, V
IH
= 2.5
5
1.5
1.5
Unit
V
ns
V
V
Input Rise and Fall
Input and Output Reference Level
Output Timing Reference Level
NOTES:
V
Z
is programmable from -2V to +7V.
I
OL
& I
OH
programmable from 0 to 16mA.
Tester Impedance Z0 = 75
Ω.
V
Z
is typically the midpoint of V
OH
and V
OL
.
I
OL
& I
OH
are adjusted to simulate a typical resistive load circuit.
ATE tester includes jig capacitance.
D.U.T.
C
eff
= 50 pf
V
Z
≈
1.5V
(Bipolar Supply)
I
OH
Current Source
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 14
© 2014 Microsemi Corporation. All rights reserved.
4
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
WF1M32B-XXX3
AC CHARACTERISTICS – WRITE/ERASE/PROGRAM OPERATIONS – WE# CONTROLLED
Parameter
Write Cycle Time
Chip Select Setup Time
Write Enable Pulse Width
Address Setup Time
Data Setup Time
Data Hold Time
Address Hold Time
Write Enable Pulse Width High
Duration of Byte Programming Operation (1)
Sector Erase
Read Recovery Time before Write (3)
V
CC
Setup Time
Chip Programming Time
Output Enable Setup Time
Output Enable Hold Time (2)
NOTES:
1. Typical value for t
WHWH1
is 9μs.
2. For Toggle and Data Polling.
3. Guaranteed by design, but not tested.
Symbol
t
AVAV
t
ELWL
t
WLWH
t
AVWL
t
DVWH
t
WHDX
t
WLAX
t
WHWL
t
WHWH1
t
WHWH2
t
GHWL
t
VCS
t
WC
t
CS
t
WP
t
AS
t
DS
t
DH
t
AH
t
WPH
Min
100
0
50
0
50
0
50
30
-100
Max
Min
120
0
50
0
50
0
50
30
-120
Max
Min
150
0
65
0
65
0
65
35
-150
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
μs
μs
sec
ns
ns
300
15
0
50
50
t
OES
t
OEH
0
10
0
10
0
50
300
15
0
50
50
0
10
300
15
50
AC CHARACTERISTICS – READ-ONLY OPERATIONS
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select High to Output High Z (1)
Output Enable High to Output High Z (1)
Output Hold from Addresses, CS# or OE# Change,
whichever is First (1)
1.
Guaranteed by design, not tested.
Symbol
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
ACC
t
CE
t
OE
t
DF
t
DF
t
OH
Min
100
-100
Max
100
100
40
30
30
0
0
Min
120
-120
Max
120
120
50
30
30
0
Min
150
-150
Max
150
150
55
40
40
Unit
ns
ns
ns
ns
ns
ns
ns
Microsemi Corporation reserves the right to change products or specifications without notice.
August 2014
Rev. 14
© 2014 Microsemi Corporation. All rights reserved.
5
Microsemi Corporation • (602) 437-1520 • www.microsemi.com/pmgp
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