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1N5365B

Description
Zener Diode, 36V V(Z), 10%, 5W,
CategoryDiscrete semiconductor    diode   
File Size183KB,5 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
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1N5365B Overview

Zener Diode, 36V V(Z), 10%, 5W,

1N5365B Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance11 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation5 W
Nominal reference voltage36 V
surface mountNO
Maximum voltage tolerance10%
Working test current30 mA
BL
FEATURES
power rating.
GALAXY ELECTRICAL
ZENER DIODES
1N5333B - - - 1N5388B
POWER DISSIPATION: 5.0 W
Silicon planar power zener diodes
For use in stabilizing and clipping curcuits with high
DO - 27
Standard zener voltage tolerance is ±10%. Add
suffix "B" for ±5% tolerance. other zener voltage
and tolerances are available upon request.
MECHANICAL DATA
Case:DO-27
Terminals: solderable per MIL-STD-202, method 208
Polarity: cathode Band
Marking: type number
Approx. weight: 1.15 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SYMBOL
Zener current (see Table "Characteristics")
DC pow er dissipation @ T
L
=75
, measure at zero lead length (Fig.1)
derate above 75 (NOTE 1)
Peak forw ard surge current 8.3ms single half sine-w ave superimposed on rated
load (JEDEC Method)(NOTE 1,2)
Junction temperature
VALUE
UNIT
P
D
I
FSM
T
J
T
s
5.0
40.0
see fig.5
-55---+150
-55---+150
W
mW
A
Storage temperature range
NOTES:
(1) Mounted on 8.0mm
2
copper pads to each terminal.
www.galaxycn.com
(2) 8.3ms single half sine-wav e, or equiv alent square wav e, duty cy cle=4 pulses per minute maximum.
Document Number 0284007
BL
GALAXY ELECTRICAL
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