MSC23136D-60DS10 datasheet, PDF

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MSC23136D-60DS10: DescriptionFast Page DRAM Module, 1MX36, 60ns, CMOS, PSMA72; Categorystorage storage; File Size75KB，9 Pages; ManufacturerLAPIS Semiconductor Co., Ltd.

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MSC23136D-60DS10 Overview

Fast Page DRAM Module, 1MX36, 60ns, CMOS, PSMA72

MSC23136D-60DS10 Parametric

Parameter Name	Attribute value
Maker	LAPIS Semiconductor Co., Ltd.
package instruction	SIMM, SSIM72
Reach Compliance Code	unknow
Maximum access time	60 ns
I/O type	COMMON
JESD-30 code	R-PSMA-N72
memory density	37748736 bi
Memory IC Type	FAST PAGE DRAM MODULE
memory width	36
Number of terminals	72
word count	1048576 words
character code	1000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX36
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SIMM
Encapsulate equivalent code	SSIM72
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
Maximum seat height	25.4 mm
Maximum standby current	0.01 A
Maximum slew rate	0.88 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	SINGLE

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This version:

Feb. 23. 1999

Semiconductor

MSC23136D/DL-xxBS10/DS10

1,048,576-word x 36-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE

DESCRIPTION

The MSC23136D/DL-xxBS10/DS10 is a fully decoded, 1,048,576-word x 36-bit CMOS dynamic random access

memory module composed of eight 4Mb DRAMs in SOJ packages and two 2Mb DRAMs in SOJ packages mounted

with ten decoupling capacitors on a 72-pin glass epoxy single-inline package. This module supports any application

where high density and large capacity of storage memory are required. The MSC23136DL (the low-power version) is

specially designed for lower-power applications.

FEATURES

· 1,048,576-word x 36-bit organization

· 72-pin socket insertable module

MSC23136D/DL-xxBS10 : Gold tab

MSC23136D/DL-xxDS10 : Solder tab

· Single +5V supply ± 10% tolerance

· Input

: TTL compatible

· Output

: TTL compatible, 3-state

· Refresh : 1024cycles/16ms (1024cycles/128ms: L-version)

· /CAS before /RAS refresh, hidden refresh, /RAS only refresh capability

· Fast page mode capability

· Multi-bit test mode capability

PRODUCT FAMILY

Access Time (Max.)

Family

RAC

MSC23136D/DL-60BS10/DS10

MSC23136D/DL-70BS10/DS10

60ns

70ns

30ns

35ns

CAC

15ns

20ns

Cycle

Time

(Min.)

Operating(Max.)

Standby(Max.)

Power Dissipation

110ns

130ns

4840mW

4290mW

55mW/

9.9mW(L-version)

MSC23136D-60DS10 Related Products

	MSC23136D-60DS10	MSC23136D-70BS10
Description	Fast Page DRAM Module, 1MX36, 60ns, CMOS, PSMA72	Fast Page DRAM Module, 1MX36, 70ns, CMOS, PSMA72
Maker	LAPIS Semiconductor Co., Ltd.	LAPIS Semiconductor Co., Ltd.
package instruction	SIMM, SSIM72	SIMM, SSIM72
Reach Compliance Code	unknow	unknow
Maximum access time	60 ns	70 ns
I/O type	COMMON	COMMON
JESD-30 code	R-PSMA-N72	R-PSMA-N72
memory density	37748736 bi	37748736 bi
Memory IC Type	FAST PAGE DRAM MODULE	FAST PAGE DRAM MODULE
memory width	36	36
Number of terminals	72	72
word count	1048576 words	1048576 words
character code	1000000	1000000
Maximum operating temperature	70 °C	70 °C
organize	1MX36	1MX36
Output characteristics	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SIMM	SIMM
Encapsulate equivalent code	SSIM72	SSIM72
Package shape	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	5 V	5 V
Certification status	Not Qualified	Not Qualified
refresh cycle	1024	1024
Maximum seat height	25.4 mm	25.4 mm
Maximum standby current	0.01 A	0.01 A
Maximum slew rate	0.88 mA	0.78 mA
Nominal supply voltage (Vsup)	5 V	5 V
surface mount	NO	NO
technology	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	1.27 mm
Terminal location	SINGLE	SINGLE

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