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2302

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 60mΩ @ 2.8A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: N-channel N-channel, 20V/2.3A, 40 milliohms.
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size343KB,2 Pages
ManufacturerFine Made Electronics Group Co., Ltd.
Websitehttp://www.superchip.cn/index.aspx
Shenzhen Fuman Electronics Group Co., Ltd. was founded in 2001. It is a national high-tech enterprise engaged in the design, development, packaging, testing and sales of high-performance analog and mixed-signal integrated circuits. It currently has more than 400 IC products in the consumer field, including power management, LED driver, MOSFET, etc.
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2302 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2.3A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 60mΩ @ 2.8A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: N-channel N-channel, 20V/2.3A, 40 milliohms.

2302 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C2.3A
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance60mΩ @ 2.8A,4.5V
Maximum power dissipation (Ta=25°C)1.25W
typeN channel

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此文档权利由FM富满享有,您也可访问FM富满官方½站获取;立创商城 WWW.SZLCSC.COM,中½领先的现货元器件交易平台。
深圳市富满电子集团股½有限公司
SHEN ZHEN FINE MAD ELECTRONICS GROUP CO., LTD.
2302
(文件编号:S&CIC0799)
V
DS
= 20V
R
DS(ON)
, V
gs
@2.5V, I
ds
@2.0A = 50mΩ@TYP
R
DS(ON)
, V
gs
@4.5V, I
ds
@2.8A =40mΩ@TYP
20V N
沟道增强型
MOS
场效应管
1
特点
高级的加工技术
极½的导通电阻高密度的单元设计
SOT-23
G
D
S
D
内部结构示意图
Drain
Gate
Source
最大额定值和热特性
(T
A
=25℃,除非另有说明)
符号
C
V
DS
V
GS
I
D
I
DM
TA=25℃
P
D
T
J
, T
stg
R
θJA
B
参数
漏源电压
栅源电压
漏极电流
漏极脉冲电流
最大功耗
TA=75℃
工½结温和存储温度范围
结环热阻(PCB 安装)
注:重复性极限值:脉冲½度由最高结温限制。
20
±8
2.3
8
1.25
0.8
-55 to 150
140
单½
V
A
W
℃/W
1
页 共
2
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