934068284115 datasheet, PDF - EEWORLD Datasheet

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934068284115: DescriptionMOSFET N-CH 55V 5A SOT223; CategoryDiscrete semiconductor The transistor; File Size307KB，12 Pages; ManufacturerNexperia; Websitehttps://www.nexperia.com; Environmental Compliance

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934068284115 Overview

MOSFET N-CH 55V 5A SOT223

934068284115 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Nexperia
package instruction	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	compli
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)	60 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

934068284115 Related Products

	934068284115	BUK9840-55/CUX	BUK9840-55,115
Description	MOSFET N-CH 55V 5A SOT223	MOSFET N-CH 55V 5A SOT223	MOSFET N-CH 55V 5A SOT223
package instruction	SMALL OUTLINE, R-PDSO-G4	PLASTIC, SC-73, 4 PIN	SMALL OUTLINE, R-PDSO-G4
Other features	LOGIC LEVEL COMPATIBLE, ESD PROTECTED	LOGIC LEVEL COMPATIBLE, ESD PROTECTED	LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Efficiency Rating (Eas)	60 mJ	60 mJ	60 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	55 V	55 V	55 V
Maximum drain current (ID)	5 A	5 A	5 A
Maximum drain-source on-resistance	0.04 Ω	0.04 Ω	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1
Number of terminals	4	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A	40 A	40 A
surface mount	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maker	Nexperia	Nexperia	-
Reach Compliance Code	compli	compliant	-
JESD-609 code	e3	-	e3
Humidity sensitivity level	1	-	1
Terminal surface	Tin (Sn)	-	Tin (Sn)
Brand Name	-	Nexperia	Nexperia
Parts packaging code	-	SC-73	SC-73
Contacts	-	4	4
Manufacturer packaging code	-	SOT223	SOT223

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