2N6659X datasheet, PDF - EEWORLD Datasheet

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2N6659X: DescriptionPower Field-Effect Transistor, 1.4A I(D), 35V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, METAL, TO-39, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size71KB，3 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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2N6659X Overview

Power Field-Effect Transistor, 1.4A I(D), 35V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, METAL, TO-39, 3 PIN

2N6659X Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	35 V
Maximum drain current (ID)	1.4 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	3 A
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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N-CHANNEL ENHANCEMENT

MODE MOSFET

2N6659X

•

Switching Regulators

•

Converters

•

Motor Drives

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VDS

VGS

IDM

Tstg

Drain – Source Voltage

Gate – Source Voltage

Drain Current

Pulsed Drain Current

Power Dissipation

TC = 25°C

TC = 100°C

TC = 25°C

Derate Above TC = 25°C

Junction Temperature Range

Storage Temperature Range

35V

±20V

1.4A

1.0A

6.25W

0.05W/°C

-55 to +150°C

Pulse width limited by maximum junction temperature.

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 9688

Issue 2

Page 1 of 3

Website:

http://www.semelab-tt.com

2N6659X Related Products

	2N6659X
Description	Power Field-Effect Transistor, 1.4A I(D), 35V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, METAL, TO-39, 3 PIN
Is it Rohs certified?	incompatible
Maker	TT Electronics plc
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	35 V
Maximum drain current (ID)	1.4 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AD
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	3 A
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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