2N3810HR
Datasheet
Rad-Hard 60 V, 0.05 A PNP dual matched transistor
8
5
Features
V
ceo
I
C
(max.)
0.05 A
H
FE
at 10 V,
150 mA
> 125
T
j
(max.)
200 °C
1
4
Flat-8
6
5
4
60 V
•
•
•
Hermetic packages
ESCC and JANS qualified
Up to 100 krad(Si) low dose rate
1
2
3
LCC-6
Description
C2
B2
E2
1
2
3
4
C1
B1
E1
8
7
6
5
2N3810K and SOC3810HR are silicon planar PNP dual matched transistors
packaged in Flat-8 and LCC-6 respectively and available in 100 krad versions. They
are specifically designed for aerospace Hi-Rel applications and qualified as per
ESCC 5207/005 specification. In case of discrepancies between this datasheet and
the relevant agency specification, the latter takes precedence.
Flat-8
Pin 4 and pin 5
are connected together to the seal ring and lid
E1
B1
C1
AM03130REV1
Product summary
Product summary
Device
2N3810Kx
2N3810RKx
SOC3810HRx
SOC3810RHRx
Qualification
system
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
Agency
specification
5207/005
5207/005
5207/005
5207/005
Package
Flat-8
Flat-8
LCC-6
LCC-6
Radiation
level
-
100 krad(Si)
-
100 krad(Si)
4
6
5
E2
B2
C2
3
1
2
LCC-6
The upper metallic shield is not internally connected neither
to any pin nor to the die inside
Product status link
2N3810HR
DS6098
-
Rev 9
-
September 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
2N3810HR
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
for Flat-8
(1)
P
TOT
Total dissipation at T
amb
≤ 25 °C
for Flat-8
(2)
for LCC-6
(1)
for LCC-6
(2)
T
STG
T
J
1. One section.
2. Both sections.
Storage temperature range
Max. operating junction temperature
Parameter
Value
-60
-60
-5
-50
0.5
0.6
0.5
0.6
-65 to 200
200
°C
°C
W
Unit
V
V
V
mA
Table 2.
Thermal data
Symbol
Parameter
for Flat-8
(1)
R
thJA
Thermal resistance junction-ambient max
for Flat-8
(2)
for LCC-6
(1)
for LCC-6
(2)
1. One section.
2. Both sections.
Value
350
292
350
292
°C/W
Unit
DS6098
-
Rev 9
page 2/14
2N3810HR
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C unless otherwise specified.
Table 3.
Electrical characteristics
Symbol
I
CBO
I
EBO
V
(BR)CBO
Parameter
Collector-base cut-off current (I
E
= 0)
Emitter-base cut-off current (I
C
= 0)
Collector-base breakdown voltage
(I
E
= 0)
Collector-emitter breakdown voltage
(I
B
= 0)
Emitter-base breakdown voltage
(I
C
= 0)
Collector-emitter saturation voltage
Test conditions
V
CB
= -50 V
V
CB
= -50 V T
C
= 150 °C
V
EB
= -4 V
I
C
= -10 μA
-60
Min.
Max.
-10
-10
-20
Unit
nA
μA
nA
V
V
(BR)CEO
(1)
I
C
= -10 mA
-60
V
V
(BR)EBO
I
E
= -10 μA
I
C
= -100 µA I
B
= -10 µA
I
C
= -1 mA I
B
= -100 µA
I
C
= -100 µA I
B
= -10 µA
I
C
= -1 mA I
B
= -100 µA
I
C
= 10 µA V
CE
= 5 V
I
C
= 100 µA V
CE
= 5 V
I
C
= 500 µA V
CE
= 5 V
-5
-0.2
-0.25
-0.7
-0.8
100
150
150
150
125
60
0.9
0.85
1.1
1.18
5
3
5
0.8
1
-5
450
450
450
V
V
V
V
V
V
CE(sat)
(1)
V
BE(sat)
(1)
Base-emitter saturation voltage
h
FE
(1)
DC current gain
I
C
= 1 mA V
CE
= 5 V
I
C
= 10 mA V
CE
= 5 V
I
C
= 100 µA V
CE
= -5 V
T
amb
= -55 °C
h
FE2-1
/ h
FE2-2
h
FE2-1
/ h
FE2-2
DC current ratio comparison
DC current ratio comparison
I
C
= -100 µA V
CE
= -5 V
I
C
= -100 µA V
CE
= -5 V
T
amb
= -55 °C to +125 °C
V
CE
= -5 V I
C
= -10 µA
mV
mV
mV
mV
mV
µA
Δ|V
BE1
-V
BE2
|
Base-emitter voltage differential
V
CE
= -5 V I
C
= -100 µA
V
CE
= -5 V I
C
= -10 mA
V
CE
= -5 V I
C
= -100 µA
Δ|V
BE1
-V
BE2
|
Base-emitter voltage differential
T
amb
= -55 °C to +25 °C
T
amb
= +25 °C to +125 °C
I
Lks
Leakage current between sections
V = -50 V to E
2
, B
2
, C
2
V = 0 V to E
1
, B
1
, C
1
V
CE
= -10 V I
C
= -1 mA
f = 1 kHz
150
h
fe
Small signal current gain
600
DS6098
-
Rev 9
page 3/14
2N3810HR
Electrical characteristics
Symbol
f
T
Parameter
Transition frequency
Output capacitance
(I
E
= 0)
Input capacitance
(I
C
= 0)
Input impedance
Test conditions
I
C
= -1 mA V
CE
= -5 V
f = 100 MHz
V
CB
= -5 V
100 kHz ≤ f ≤ 1 MHz
V
EB
= -0.5 V
100 kHz ≤ f ≤ 1 MHz
I
C
= -1 mA V
CE
= -10 V
f = 1 kHz
V
CE
= -5 V I
C
= -200 µA
Min.
80
Max.
500
Unit
MHz
C
OBO
6
pF
C
IBO
15
pF
hie
3
30
kΩ
NF1
Noise figure
R
S
= 2 kΩ f = 100 Hz
BW = 20 Hz
V
CE
= -5 V I
C
= -200 µA
7
dB
NF2
Noise figure
R
S
= 2 kΩ f = 1 kHz
BW = 200 Hz
V
CE
= -5 V I
C
= -200 µA
3
dB
NFw
Noise figure
R
S
= 2 kΩ
Bandwidth = 10 Hz to 15.7 kHz
3.5
dB
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
DS6098
-
Rev 9
page 4/14
2N3810HR
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
h
FE
@ V
CE
= 5 V
AM16340v1
Figure 2.
V
CE(sat)
@ h
FE
= 10
AM16340v1
1000
1
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
100
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
0.1
10
0.0001
0.001
I
C
(A)
0.01
0.1
0.01
0.0001
0.001
I
C
(A)
0.01
Figure 3.
V
BE(sat)
@ h
FE
= 10
AM16341v1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.0001
0.001
0.01
T
J
=-55°C
T
J
=-40°C
T
J
=25°C
T
J
=110°C
T
J
=125°C
I
C
(A)
0.1
DS6098
-
Rev 9
page 5/14
京公网安备 11010802033920号
EEWORLD
