NSBA114YDXV6T5 datasheet, PDF - EEWORLD Datasheet

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NSBA114YDXV6T5: Description100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN; CategoryDiscrete semiconductor The transistor; File Size120KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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NSBA114YDXV6T5 Overview

100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, CASE 463A-01, 6 PIN

NSBA114YDXV6T5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
package instruction	PLASTIC, CASE 463A-01, 6 PIN
Contacts	6
Manufacturer packaging code	CASE 463A-01
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 4.7
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	80
JESD-30 code	R-PDSO-F6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.5 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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MUN5114DW1,

NSBA114YDXV6,

NSBA114YDP6

Dual PNP Bias Resistor

Transistors

R1 = 10 kW, R2 = 47 kW

PNP Transistors with Monolithic Bias

Resistor Network

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space.

Features

(3)

(4)

(5)

(6)

http://onsemi.com

PIN CONNECTIONS

(2)

(1)

•

S and NSV Prefix for Automotive and Other Applications

•

Requiring Unique Site and Control Change Requirements;

AEC-Q101 Qualified and PPAP Capable

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MARKING DIAGRAMS

0D M

SOT−363

CASE 419B

MAXIMUM RATINGS

= 25°C, common for Q1 and Q2, unless otherwise noted)

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current

−

Continuous

Input Forward Voltage

Input Reverse Voltage

Symbol

CBO

CEO

IN(fwd)

IN(rev)

Max

100

Unit

Vdc

mAdc

Vdc

0D/Q

0D M

SOT−563

CASE 463A

SOT−963

CASE 527AD

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

= Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

Device

MUN5114DW1T1G,

SMUN5114DW1T1G

NSBA114YDXV6T1G

NSBA114YDP6T5G

Package

SOT−363

SOT−563

SOT−963

Shipping

†

3,000 / Tape & Reel

4,000 / Tape & Reel

8,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and

tape sizes, please refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2012

September, 2012

−

Rev. 0

Publication Order Number:

DTA114YD/D

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