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JANSF2N2484

Description
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3
CategoryDiscrete semiconductor    The transistor   
File Size53KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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JANSF2N2484 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3

JANSF2N2484 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Objectid8358960500
package instructionHERMETIC SEALED, METAL CAN-3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)225
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Certification statusNot Qualified
GuidelineMIL-19500; RH - 300K Rad(Si)
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices
2N2484
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
2N2484
60
60
6.0
50
360
1.2
-65 to +200
Max.
146
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.06 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
0
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CES
I
CBO
I
CEO
I
EBO
Min.
60
5.0
5.0
10
2.0
2.0
10
Max.
Unit
Vdc
ηAdc
ηAdc
µAdc
ηAdc
ηAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc
Collector-Base Cutoff Current
V
CB
= 45 Vdc
V
CB
= 60 Vdc
Collector-Emitter Cutoff Current
V
CE
= 5.0 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

JANSF2N2484 Related Products

JANSF2N2484 2N2484DIE JANTXV2N2484 JANKCAF2N2484
Description Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, HERMETIC SEALED, METAL CAN-3 Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, DIE Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, SIMILAR TO TO-18, 3 PIN Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-206AA, TO-18, 3 PIN
Objectid 8358960500 1598209469 2078586459 8358966929
package instruction HERMETIC SEALED, METAL CAN-3 , SIMILAR TO TO-18, 3 PIN TO-18, 3 PIN
Reach Compliance Code compliant compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Collector-emitter maximum voltage 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 225 250 250 225
Number of components 1 1 1 1
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Transistor component materials SILICON SILICON SILICON SILICON
Is it Rohs certified? incompatible - incompatible incompatible
JEDEC-95 code TO-18 - TO-206AA TO-206AA
JESD-30 code O-MBCY-W3 - O-MBCY-W3 O-MBCY-W3
Number of terminals 3 - 3 3
Package body material METAL - METAL METAL
Package shape ROUND - ROUND ROUND
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL
surface mount NO - NO NO
Terminal form WIRE - WIRE WIRE
Terminal location BOTTOM - BOTTOM BOTTOM

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