TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices
2N2484
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
Operating & Storage Junction Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
T
J
,
T
stg
Symbol
R
θ
JC
2N2484
60
60
6.0
50
360
1.2
-65 to +200
Max.
146
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.06 mW/
0
C above T
A
= +25
0
C
2) Derate linearly 6.85 mW/
0
C above T
C
= +25
0
C
0
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics
Symbol
V
(BR)
CEO
I
CES
I
CBO
I
CEO
I
EBO
Min.
60
5.0
5.0
10
2.0
2.0
10
Max.
Unit
Vdc
ηAdc
ηAdc
µAdc
ηAdc
ηAdc
µAdc
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 10 mAdc
Collector-Emitter Cutoff Current
V
CE
= 45 Vdc
Collector-Base Cutoff Current
V
CB
= 45 Vdc
V
CB
= 60 Vdc
Collector-Emitter Cutoff Current
V
CE
= 5.0 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N2484 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
I
C
= 1.0
µAdc,
V
CE
= 5.0 Vdc
I
C
= 10
µAdc,
V
CE
= 5.0 Vdc
I
C
= 100
µAdc,
V
CE
= 5.0 Vdc
I
C
= 500
µAdc,
V
CE
= 5.0 Vdc
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc
I
C
= 10 mAdc, V
CE
= 5.0 Vdc
Collector-Emitter Saturation Voltage
I
C
= 1.0 mAdc, I
B
= 100
µAdc
Base-Emitter Voltage
V
CE
= 5.0 Vdc, I
C
= 100
µAdc
45
200
225
250
250
225
h
FE
500
675
800
800
800
0.3
Vdc
Vdc
V
CE(sat)
V
BE
0.5
0.7
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
I
C
= 50
µAdc,
V
CE
= 5.0 Vdc, f = 5.0 MHz
I
C
= 500
µAdc,
V
CE
= 5.0 Vdc, f = 30 MHz
Open Circuit Output Admittance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Open Circuit Reverse-Voltage Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Input Impedance
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, f = 1.0 kHz
Output Capacitance
V
CB
= 5.0 Vdc, I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
Input Capacitance
V
EB
= 0.5 Vdc, I
C
= 0, 100 kHz
≤
f
≤
1.0 MHz
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
h
fe
h
oe
h
re
h
ie
h
fe
C
obo
C
ibo
3.0
2.0
7.0
40
8.0x10
-4
µmhos
3.5
250
24
900
5.0
6.0
kΩ
pF
pF
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2