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RC28F128P33B85

Description
Flash, 8MX16, 85ns, PBGA64, BGA-64
Categorystorage    storage   
File Size1MB,96 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

RC28F128P33B85 Overview

Flash, 8MX16, 85ns, PBGA64, BGA-64

RC28F128P33B85 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicron Technology
package instructionBGA-64
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time85 ns
Other featuresSYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingNO
JESD-30 codeR-PBGA-B64
length10 mm
memory density134217728 bi
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size4,127
Number of terminals64
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA64,8X8,40
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
page size4 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3 V
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Department size16K,64K
Maximum standby current0.000155 A
Maximum slew rate0.028 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
switch bitNO
typeNOR TYPE
width8 mm
Numonyx™ StrataFlash
®
Embedded Memory
(P33)
Datasheet
Product Features
High performance:
— 85 ns initial access
— 52MHz with zero wait states, 17ns clock-to-
data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst
mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 3.0 V buffered programming at 7 µs/byte
(Typ)
Architecture:
— Multi-Level Cell Technology: Highest
Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
Voltage and Power:
— V
CC
(core) voltage: 2.3 V – 3.6 V
— V
CCQ
(I/O) voltage: 2.3 V – 3.6 V
— Standby current: 35µA (Typ) for 64-Mbit
— 4-Word synchronous read current:
16 mA (Typ) at 52MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology
Security:
— One-Time Programmable Registers:
— 64 unique factory device identifier bits
— 2112 user-programmable OTP bits
— Selectable OTP space in Main Array:
— Four pre-defined 128-KByte blocks (top or
bottom configuration).
— Up to Full Array OTP Lockout
— Absolute write protection: V
PP
= V
SS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down capability
Software:
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Numonyx™ Flash Data Integrator optimized
— Basic Command Set and Extended
Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 56-Lead TSOP package (64, 128, 256, 512-
Mbit)
— 64-Ball Numonyx™ Easy BGA package (64,
128, 256, 512-Mbit)
— Numonyx™ QUAD+ SCSP (64, 128, 256,
512-Mbit)
— 16-bit wide data bus
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