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MXLPLAD15KP18CA

Description
Trans Voltage Suppressor Diode, 15000W, 18V V(RWM), Bidirectional, 1 Element, Silicon
CategoryDiscrete semiconductor    diode   
File Size380KB,6 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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MXLPLAD15KP18CA Overview

Trans Voltage Suppressor Diode, 15000W, 18V V(RWM), Bidirectional, 1 Element, Silicon

MXLPLAD15KP18CA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrochip
package instructionR-PSSO-G1
Reach Compliance Codecompli
Other featuresHIGH RELIABILITY
Maximum breakdown voltage22.1 V
Minimum breakdown voltage20 V
Breakdown voltage nominal value21.05 V
Shell connectionCATHODE
Maximum clamping voltage29.2 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PSSO-G1
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation15000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
GuidelineMIL-19500
Maximum repetitive peak reverse voltage18 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
MPLAD15KP7.0A –
MPLAD15KP200CA
Available
SURFACE MOUNT 15,000 WATT
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
High-Reliability
screening available
in reference to
MIL-PRF-19500
These high power 15 kW rated transient voltage suppressors in a surface mount package are
provided with design features to minimize thermal resistance and cumulative heating. They
are particularly effective at meeting the multi-stroke lightning standard RTCA DO-160, section
22 for aircraft design. This efficient low profile package design is offered in standoff voltage
selections (V
WM
) of 7 volt to 200 volts in either unidirectional or bidirectional construction.
PLAD
(The cathode is the metal base
under the body of this device.)
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
Available in both unidirectional and bidirectional construction (bidirectional with CA suffix).
High reliability with wafer fabrication and assembly lot traceability.
All parts surge tested.
Low profile surface mount package.
Optional upscreening is available with various screening and conformance inspection options based
on MIL-PRF-19500. Refer to
Upscreened Plastic Products
brochure on our web site for more details
on the screening options.
Suppresses transients up to 15,000 W @ 10/1000 μs (see
figure 1).
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B.
RoHS compliant versions are available.
3σ lot norm screening performed on standby current (I
D
).
Also available:
PLAD30KP
(30,000 watts)
MPLAD30KP14A thru
MPLAD30KP400CA
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF.
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4.
Secondary lightning protection per IEC 61000-4-5 with 42 ohms source impedance:
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 12 ohms source impedance:
Class 1,2,3,4: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 2 ohms source impedance:
Class 2,3: MPLAD15KP7.0A to 200CA
Class 4: MPLAD15KP5.0 to 54CA
Pin injection protection per RTCA/DO-160F for Waveform 4 (6.4/69 μs at 25 ºC)*:
Level 4: MPLAD15KP7.0A to 200CA
Level 5: MPLAD15KP7.0A to 100CA
Pin injection protection per RTCA/DO-160F for Waveform 5A (40/120 μs at 25 ºC)*:
Level 4: MPLAD15KP7.0A to 28CA
*See
MicroNote 132
for further temperature derating selection.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
RF01004, Rev D (11/6/12)
©2012 Microsemi Corporation
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