MPLAD15KP18AE3 datasheet, PDF - EEWORLD Datasheet

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MPLAD15KP18AE3: DescriptionTrans Voltage Suppressor Diode, 15000W, 18V V(RWM), Unidirectional, 1 Element, Silicon; CategoryDiscrete semiconductor diode; File Size291KB，4 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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MPLAD15KP18AE3 Overview

Trans Voltage Suppressor Diode, 15000W, 18V V(RWM), Unidirectional, 1 Element, Silicon

MPLAD15KP18AE3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microchip
package instruction	R-PSSO-G1
Reach Compliance Code	compli
Other features	HIGH RELIABILITY
Maximum breakdown voltage	22.1 V
Minimum breakdown voltage	20 V
Breakdown voltage nominal value	21.05 V
Shell connection	CATHODE
Maximum clamping voltage	29.2 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-PSSO-G1
Maximum non-repetitive peak reverse power dissipation	15000 W
Number of components	1
Number of terminals	1
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	2.5 W
Certification status	Not Qualified
Guideline	MIL-19500
Maximum repetitive peak reverse voltage	18 V
surface mount	YES
technology	AVALANCHE
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

Website: http://www.microsemi.com

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

SURFACE MOUNT 15,000 W

Transient Voltage Suppressor

- High Reliability controlled devices

- Unidirectional (A) and Bidirectional (CA) construction

- Selections for 7.0 to 200 V standoff voltages (V

)

- Fast response

LEVELS

M, MA, MX, MXL

DEVICES

MPLAD15KP7.0A thru MPLAD15KP200CA, e3

FEATURES



High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Low profile surface mount

Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify

various screening and conformance inspection options based on MIL-PRF-19500. Refer to

MicroNote

129

for more details on the screening options

Suppresses transients up to 15,000 W @ 10/1000 µs (see Figure 1)

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I

APPLICATIONS / BENEFITS



Protection from switching transients and induced RF

Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:

Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA

Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:

Class 1,2,3,4: MPLAD15KP7.0A to 200CA

Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:

Class 2,3: MPLAD15KP7.0A to 200CA

Class 4: MPLAD15KP5.0 to 54CA

Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 µs):

Level 4: MPLAD15KP7.0A to 200CA

Level 5: MPLAD15KP7.0A to 100CA

Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 µs):

Level 4: MPLAD15KP7.0A to 28CA



MAXIMUM RATINGS



Peak Pulse Power dissipation at 25 °C: 15,000 watts at 10/1000 μs (also see Figures 1 and 2) with

impulse repetition rate (duty factor) of 0.05% or less

clamping

(0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -55 °C to +150 °C

Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC

board with recommended mounting pad (see page 2)

Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C

if mounted on FR4 PC board as described for thermal resistance

Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)

Solder temperatures: 260 °C for 10 s (maximum)

RF01004 Rev C, November 2010

High Reliability Product Group

Page 1 of 4

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