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1B02

Description
Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, DIP-4
CategoryDiscrete semiconductor    diode   
File Size54KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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1B02 Overview

Bridge Rectifier Diode, 1 Phase, 1A, 200V V(RRM), Silicon, DIP-4

1B02 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeDIP
package instructionR-PDIP-T4
Contacts4
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDIP-T4
JESD-609 codee0
Maximum non-repetitive peak forward current31 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
Maximum reverse current0.000005 µA
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Bulletin E2788 rev. D 04/00
1B SERIES
1A Single Phase D.I.L. Rectifier Bridge
• Leads on standard 0.1" grid
• Suitable for automatic insertion
• High surge current capability
• Fully characterised data
• Wide temperature range
• Surface mount option
+
~
~
I
O(av)
I
O(av)
= 1.0 A
V
RRM
range
50 to 1000V
-
Description
The 1B Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in
a 4 pin D.I.L. package. These devices are intended
for general use in industrial and consumer equip-
ment.
Electrical Specification
1B...
I
O
I
FSM
Maximum DC output
current
Maximum peak one
cycle, non-repetitive
surge current
I
2
t
Maximum I
2
t capability
for fusing
4.5
4.1
6.4
5.8
I
√t
V
FM
I
RM
f
V
RRM
2
2
Units Conditions
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A
√s
V
µA
µA
Hz
V
2
1.0
0.8
30
31
T
amb
= 40
o
C, Resistive or inductive load
T
amb
= 40
o
C, Capacitive load
t = 10ms, 20ms
t = 8.3ms, 16.7ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Following any rated
load condition and with
rated V
RRM
reapplied
Initial T
J
= T
J
max
100% V
RRM
reapplied
Initial T
J
= T
J
max
no voltage reapplied
Maximum I
√t
capability for fusing
Maximum peak forward
voltage per diode
Typical peak reverse
leakage per diode
Operating frequency
range
Maximum repetitive peak
reverse voltage range
64
1.0
5
100
50 to 1000
50 to 1000
t = 0.1 to 10ms, no voltage reapplied
I
FM
= 1.0A, T
J
= 25
o
C
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
Thermal and Mechanical Specifications
1B...
T
J
T
stg
R
thJA
W
Operating and storage
temperature range
Thermal resistance,
junctions to ambient
Approximate weight
0.6 (0.02)
g (oz)
60
K/W
- 55 to 150
Units
o
Conditions
C
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