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TIP36A

Description
25 A, 100 V, PNP, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size133KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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TIP36A Overview

25 A, 100 V, PNP, Si, POWER TRANSISTOR

TIP36A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknow
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)25 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JEDEC-95 codeTO-218AC
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typePNP
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
VCEsat-Max4 V
Base Number Matches1
TIP35A, TIP35B, TIP35C
(NPN); TIP36A, TIP36B,
TIP36C (PNP)
Complementary Silicon
High-Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
http://onsemi.com
25 A Collector Current
Low Leakage Current
I
CEO
= 1.0 mA @ 30 and 60 V
Excellent DC Gain
h
FE
= 40 Typ @ 15 A
High Current Gain Bandwidth Product
⎪h
fe
= 3.0 min @ I
C
= 1.0 A, f = 1.0 MHz
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector
Emitter Voltage
Collector
Base Voltage
Emitter
Base Voltage
Collector Current
Continuous
Peak (Note 1)
Base Current
Continuous
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Operating and Storage
Junction Temperature Range
Unclamped Inductive Load
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−To−Free−Air
Thermal Resistance
Symbol
V
CEO
V
CB
V
EB
I
C
TIP35A
TIP36A
60
60
TIP35B
TIP36B
80
80
5.0
25
40
5.0
125
W
W/_C
−65
to +150
90
Max
1.0
35.7
_C
mJ
Unit
°C/W
°C/W
TIP35C
TIP36C
100
100
Unit
Vdc
Vdc
Vdc
Adc
25 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−100 VOLTS, 125 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
I
B
P
D
Adc
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
T
J
, T
stg
E
SB
Symbol
R
qJC
R
qJA
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
THERMAL CHARACTERISTICS
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle
v
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
May, 2012
Rev. 6
1
Publication Order Number:
TIP35/D

TIP36A Related Products

TIP36A TIP36C TIP36B TIP35C TIP35A
Description 25 A, 100 V, PNP, Si, POWER TRANSISTOR 25 A, 100 V, PNP, Si, POWER TRANSISTOR 25 A, 100 V, PNP, Si, POWER TRANSISTOR 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-254 25 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-218
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknow unknow unknow unknow unknow
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 25 A 25 A 25 A 25 A 25 A
Collector-emitter maximum voltage 60 V 100 V 80 V 100 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 15 15 15 15 15
JEDEC-95 code TO-218AC TO-218AC TO-218AC TO-218AC TO-218AC
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type PNP PNP PNP NPN NPN
Maximum power consumption environment 125 W 125 W 125 W 125 W 125 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz 3 MHz 3 MHz
VCEsat-Max 4 V 4 V 4 V 4 V 4 V
Is it Rohs certified? incompatible - incompatible incompatible incompatible
Maximum power dissipation(Abs) 125 W 125 W 125 W - -
Maker - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
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