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SKN1500/16

Description
Rectifier Diode, 1 Phase, 1 Element, 1550A, 1600V V(RRM), Silicon, DO-200AB,
CategoryDiscrete semiconductor    diode   
File Size168KB,4 Pages
ManufacturerSEMIKRON
Websitehttp://www.semikron.com
Environmental Compliance  
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SKN1500/16 Overview

Rectifier Diode, 1 Phase, 1 Element, 1550A, 1600V V(RRM), Silicon, DO-200AB,

SKN1500/16 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSEMIKRON
package instructionO-MEDB-N2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
applicationHIGH POWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-200AB
JESD-30 codeO-MEDB-N2
JESD-609 codee2
Maximum non-repetitive peak forward current19000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-40 °C
Maximum output current1550 A
Package body materialMETAL
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1600 V
Maximum reverse current50000 µA
surface mountYES
Terminal surfaceTin/Silver (Sn/Ag)
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED

SKN1500/16 Related Products

SKN1500/16 SKN1500/04 SKN1500/12 SKN2000/24
Description Rectifier Diode, 1 Phase, 1 Element, 1550A, 1600V V(RRM), Silicon, DO-200AB, Rectifier Diode, 1 Phase, 1 Element, 1550A, 400V V(RRM), Silicon, DO-200AB, Rectifier Diode, 1 Phase, 1 Element, 1550A, 1200V V(RRM), Silicon, DO-200AB, Rectifier Diode, 1 Phase, 1 Element, 2000A, 2400V V(RRM), Silicon, DO-200AC,
Is it lead-free? Lead free Lead free Lead free Lead free
Is it Rohs certified? conform to conform to conform to conform to
package instruction O-MEDB-N2 O-MEDB-N2 O-MEDB-N2 O-MEDB-N2
Reach Compliance Code compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C
application HIGH POWER HIGH POWER HIGH POWER HIGH POWER
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-200AB DO-200AB DO-200AB DO-200AC
JESD-30 code O-MEDB-N2 O-MEDB-N2 O-MEDB-N2 O-MEDB-N2
JESD-609 code e2 e2 e2 e2
Maximum non-repetitive peak forward current 19000 A 19000 A 19000 A 30000 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
Maximum output current 1550 A 1550 A 1550 A 2000 A
Package body material METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1600 V 400 V 1200 V 2400 V
Maximum reverse current 50000 µA 50000 µA 50000 µA 50000 µA
surface mount YES YES YES YES
Terminal surface Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag) Tin/Silver (Sn/Ag)
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maker SEMIKRON SEMIKRON SEMIKRON -
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