Rectifier Diode, 1 Phase, 1 Element, 1550A, 400V V(RRM), Silicon, DO-200AB,
Parameter Name | Attribute value |
Is it lead-free? | Lead free |
Is it Rohs certified? | conform to |
Maker | SEMIKRON |
package instruction | O-MEDB-N2 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C |
application | HIGH POWER |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V |
JEDEC-95 code | DO-200AB |
JESD-30 code | O-MEDB-N2 |
JESD-609 code | e2 |
Maximum non-repetitive peak forward current | 19000 A |
Number of components | 1 |
Phase | 1 |
Number of terminals | 2 |
Maximum operating temperature | 175 °C |
Minimum operating temperature | -40 °C |
Maximum output current | 1550 A |
Package body material | METAL |
Package shape | ROUND |
Package form | DISK BUTTON |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Certification status | Not Qualified |
Maximum repetitive peak reverse voltage | 400 V |
Maximum reverse current | 50000 µA |
surface mount | YES |
Terminal surface | Tin/Silver (Sn/Ag) |
Terminal form | NO LEAD |
Terminal location | END |
Maximum time at peak reflow temperature | NOT SPECIFIED |
SKN1500/04 | SKN1500/12 | SKN1500/16 | SKN2000/24 | |
---|---|---|---|---|
Description | Rectifier Diode, 1 Phase, 1 Element, 1550A, 400V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 1550A, 1200V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 1550A, 1600V V(RRM), Silicon, DO-200AB, | Rectifier Diode, 1 Phase, 1 Element, 2000A, 2400V V(RRM), Silicon, DO-200AC, |
Is it lead-free? | Lead free | Lead free | Lead free | Lead free |
Is it Rohs certified? | conform to | conform to | conform to | conform to |
package instruction | O-MEDB-N2 | O-MEDB-N2 | O-MEDB-N2 | O-MEDB-N2 |
Reach Compliance Code | compliant | compliant | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
Other features | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C | LEAKAGE CURRENT IS NOT AT 25 DEG C |
application | HIGH POWER | HIGH POWER | HIGH POWER | HIGH POWER |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON |
Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
Maximum forward voltage (VF) | 1.3 V | 1.3 V | 1.3 V | 1.3 V |
JEDEC-95 code | DO-200AB | DO-200AB | DO-200AB | DO-200AC |
JESD-30 code | O-MEDB-N2 | O-MEDB-N2 | O-MEDB-N2 | O-MEDB-N2 |
JESD-609 code | e2 | e2 | e2 | e2 |
Maximum non-repetitive peak forward current | 19000 A | 19000 A | 19000 A | 30000 A |
Number of components | 1 | 1 | 1 | 1 |
Phase | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 |
Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C |
Maximum output current | 1550 A | 1550 A | 1550 A | 2000 A |
Package body material | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND |
Package form | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
Maximum repetitive peak reverse voltage | 400 V | 1200 V | 1600 V | 2400 V |
Maximum reverse current | 50000 µA | 50000 µA | 50000 µA | 50000 µA |
surface mount | YES | YES | YES | YES |
Terminal surface | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) | Tin/Silver (Sn/Ag) |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | END | END | END | END |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Maker | SEMIKRON | SEMIKRON | SEMIKRON | - |