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1N3715

Description
Diode 100V 275A 2-Pin DO-9
CategoryDiscrete semiconductor    diode   
File Size55KB,1 Pages
ManufacturerNew Jersey Semiconductor
Websitehttp://www.njsemi.com
Download Datasheet Parametric Compare View All

1N3715 Overview

Diode 100V 275A 2-Pin DO-9

1N3715 Parametric

Parameter NameAttribute value
MakerNew Jersey Semiconductor
Reach Compliance Codeunknown
<£^mi.-Conductor ^Products., (inc..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (201)
376-2922
(212)227-6005
Germanium
I
1N3712-21
I
FAX: (201) 376-8960
Diodes
J_
AXIAL DIODE OUTLINE
1N3712 1N3714 IN371B 1N371B 1N3720
1N3713 1N3710 1N3717 1N37I9 1N3721
MAX.
:sJL_
[
f 4-
,
,ot
M4
Forward Current*
Reverse
Current*
Storage
Temperature
L»d Temperature X," :£
5
10
25
50
100
run
10
20
50
50
100
ma
.020
•••.002
— M
0
|N° —
.IOOMAX.
OQ
.020
+ .002
-.001
,
.,,.«
,,
.
r
ALL DIMENSIONS IN INCHES.
DIMENSIONS ARE REFERENCE UMI r«e. TQi.rnvifirO
from
case for 10 seconds
•Derate maximum currunt.s I'/, per "C ambient temperature above 25'C-
electrical characteristics:
1N3712.
STATIC CHARACTERISTICS
Peak Point Current
Valley Point Current
Peak Point Voltage
Valley Point Voltage
Reverie Voltage (In £= Ir typ.)
Forward Voltage (Ir — Ir typ.)
(I,-
= .25 I,, typ.)
1N3713
0.075
1.000
1.025
1N3714
Max.
Min.
Typ.
Max.Min.
1N371S
Typ.
Max.
Min.
I,-
Iv
Typ. Max. Min. Typ.
0.1)
.'1.0
1.1
2.0
2.2
2.4
2.15
2.20
2.25
.310
72
395
40
535
0.12
05
350
0.18 .075
58
315
• 40
.140
.005
(i5
355
20
72
305
40
535
0.20 0.48
<!5
350
40
500
.105 .210
58
315
65
355
20
v,.
Vv
V,,
V,,-
500
475
410
510
450
•175
410
510
450
VKS*
DYNAMIC CHARACTERISTICS
Total Series Inductance
Total Series Resistance
Valley Point Terminal Capacitance'
Max. Negative Terminal Conductance
Resistive Cutoff Frequency
SolMfasonant Frequency
Freqi^ency of Oscillation
Rise Time
Ls
Ks
C
-G
f,,,
f,..
F
t."'
0.5
1.5
5
8
2.3
3.2
3,2
-1.0
10
7.5
0.5
1.7
3.5
8,5
3.2
3.8
3.8
1.7
•1.0
5.0
0.5
0.5
1.0
10
18
2.2
2.2
l.i
il
3.0
25
1G
1.1
7.0
3.0
10.0
22
0.5
19
3.0
2.7
2.7
l.C
*V™ is defined as the valuo of forward voltage at a forward current of out quarter the typical peak current.
* "The frequency of oscillation (under short circuit conditions) for steady state larxo si;;nal sinusoidal oscillation is given by
equation. (3) which is the maximum frequency attainable without capacitance compensation.
Quality Semi-Conductors

1N3715 Related Products

1N3715 1N3712 1N3713 1N3721
Description Diode 100V 275A 2-Pin DO-9 Diode 100V 275A 2-Pin DO-9 Diode 100V 275A 2-Pin DO-9 Diode 100V 275A 2-Pin DO-9
Reach Compliance Code unknown unknow unknown unknown
Maker New Jersey Semiconductor - New Jersey Semiconductor New Jersey Semiconductor
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