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NCE3407A
NCE P-Channel
Enhancement Mode Power MOSFET
Description
The NCE3407A uses advanced trench technology to provide
excellent R
DS(ON)
, This device is suitable for use as a load
switch or in PWM applications.
G
D
General Features
●
V
DS
= -30V,I
D
= -4.3A
R
DS(ON)
< 90mΩ @ V
GS
=-4.5V
R
DS(ON)
<55mΩ @ V
GS
=-10V
●
High power and current handing capability
●
Lead free product is acquired
●
Surface mount package
S
Schematic diagram
Marking and pin assignment
Application
●
PWM applications
●
Load switch
●
Power management
SOT-23 top view
Package Marking and Ordering Information
Device Marking
3407A
Device
NCE3407A
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
-30
±20
-4.3
-20
1.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
84
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250μA
V
DS
=-24V,V
GS
=0V
-30
-
-33
-
-
-1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
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Parameter
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=-4.3A
-
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-4A,V
GS
=-10V
V
DD
=-15V,R
L
=3.6Ω
V
GS
=-10V,R
GEN
=3Ω
-
-
-
-
-
-
-
C
lss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
-
-
-
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-4A
V
DS
=-5V,I
D
=-4.1A
-1
-
-
5.5
NCE3407A
Condition
V
GS
=±20V,V
DS
=0V
Symbol
I
GSS
Min
-
Typ
-
-1.5
42
50
-
700
120
75
9
5
28
13.5
14
3.1
3
-
Max
±100
-3
55
90
-
-
-
-
-
-
-
-
-
-
-
-1.2
Unit
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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Typical Electrical and Thermal Characteristics
t
on
t
r
90%
NCE3407A
t
off
t
f
90%
t
d(on)
t
d(off)
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
Rdson On-Resistance(mΩ)
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Wuxi NCE Power Semiconductor Co., Ltd
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NCE3407A
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Wuxi NCE Power Semiconductor Co., Ltd
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NCE3407A
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
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